Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

Abstract

We have investigated the structural features of a strain-compensated InGaP/InGaP multiple-quantum-well (MQW) structure on GaAs (100) substrate with a band-gap energy of around 1.7 eV for solar cell applications. In transmission electron microscopy images, noticeable thickness modulation was observed in the barrier layers for a sample grown at the