Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(0 0 1) substrates

Tunable Ferromagnetic Transition Temperature and Vertical Hysteretic Shift in SrRuO3 Films Integrated on Si(001)

“…Such successful epitaxial growth of the SRO film on the buffered Si substrate could be attributed to the good domain match between TiN and Si and STO and TiN. 20 It is worth noting that as P O 2 increased from 1 to 15 Pa, the SRO(00l) (l = 1, 2) diffraction peaks shifted to large 2θ angles and eventually overlapped with the STO(00l) (l = 1, 2) diffraction peaks, which confirms the structural evolution of the SRO films. We can calculate the out-of-plane lattice parameter (c) from the out-of-plane θ−2θ scan data.…”

“…On the basis of the results of the XRD and RHEED measurements, the epitaxial orientations of the SRO films on Si deposited at P O 2 = 1–15 Pa were obtained as follows: SRO⟨010⟩//Si⟨010⟩ (in-plane) and SRO(001)//Si(001) (out-of-plane). Such successful epitaxial growth of the SRO film on the buffered Si substrate could be attributed to the good domain match between TiN and Si and STO and TiN …”

Field-assisted selective-melt sintering: a novel approach to high-density ceramics

“…It is interesting to note that this reduction process induced by the applied field is equivalent to high-temperature annealing in vacuum and pulsed laser annealing. [19,20] Segregation of defects and impurity precipitation at dislocations and grain boundaries As discussed above, the applied field primarily generates anion and cation vacancies, in addition to electron trapped M (n−1)+ → M 0 cation and impurity defects. The neutral defects can get into interstitial sites with lower activation energy for diffusion and cluster to form metallic impurity precipitates.…”

“…Electrical-field induced creation of defects has interesting parallels with pulsed laser annealing, internal reduction, and vaccum annealing. [19,20] The field-induced defects interact with and segregate at dislocations and grain boundaries, leading to higher currents and joule heating along grain boundaries which further enhance the concentration of defects. This leads to an avalanche and melting of grain boundary regions.…”

Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

“…This achievement facilitates production of spin-based devices. Different materials have been investigated for this application and some semiconductors such as VO2, ZnO, TiO2, Y2O3, and In2O3 have shown promising results at room temperature [1][2][3][4][5]. Among those VO2 shows a strong correlated electron system with a small band gap (~0.7 eV at room temperature) but its magnetic properties have not been studied yet.…”