Thin film ferroelectric structures on diamond for high power microwave applications

Tumarkin, A. V.; Razumov, S. V.; Gagarin, A. G.; Altynnikov, A. G.; Mikhailov, A. K.; Platonov, Roman; Kotel'nikov, I. V.; Kozyrev, A. B.; Butler, James E.

doi:10.1016/j.diamond.2016.10.007

Cited by 4 publications

(4 citation statements)

References 41 publications

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“…The working area of the planar capacitor under test is (400 × 2) µm 2 that in turn corresponds to the dissipated power density of 0.125 mW/µm 2 , however, no overheating of the active area was observed. Earlier in [28,29] the performance of the BST capacitors on diamond and sapphire substrates at high MW power was investigated. The BST capacitor on the sapphire substrate was overheated by 20 K at the dissipated power density of 200 mW/(10 × 2000) µm 2 = 0.01 mW/µm 2 , whereas the BST/diamond structure was overheated on 2 K at the same power density [29].…”

Section: Discussionmentioning

confidence: 99%

“…Earlier in [28,29] the performance of the BST capacitors on diamond and sapphire substrates at high MW power was investigated. The BST capacitor on the sapphire substrate was overheated by 20 K at the dissipated power density of 200 mW/(10 × 2000) µm 2 = 0.01 mW/µm 2 , whereas the BST/diamond structure was overheated on 2 K at the same power density [29]. Despite the excellent heat-conductivity of the diamond substrate, the overheating was observed due to the low Q-factor of the capacitor fabricated.…”

Section: Discussionmentioning

confidence: 99%

“…It is well known that the low thermal conductivity of dielectric substrates commonly used at microwaves, such as alumina, sapphire, magnesium oxide, is one of the reason for the overheating of the active area of thin-film element [26,27]. So, the usage of high heat-conducting substrate can significantly improve the heat sink, as was demonstrated for BST capacitor on diamond substrate in [28,29]. However, diamond is a rather expensive material and highly difficult to process.…”

Section: Introductionmentioning

confidence: 99%

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Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications

et al. 2020

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The ferroelectric barium-strontium titanate (BST) multi-layer structure has been formed directly on silicon carbide by serial deposition and "in situ" annealing of layers. This approach allowed us to achieve the high-quality perovskite lattice of ferroelectric that provides the best combination of high tunability and low losses for BST/SiC structures at microwaves. Electric characteristics of BST/SiC planar capacitor structures were studied under the high level of microwave power for the first time. The BST/SiC structure consisted of highly oriented ferroelectric film on highly heat-conducting substrate have demonstrated the absence of the overheating of the active area of the capacitor under dissipated power density up to 125 W/mm 2 .

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications

et al. 2020

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“…Previous efforts have aimed to grow BST thin films on various substrates, including single-crystal silicon, platinum-coated silicon, Pt/Ti/SiO 2 /Si substrates and perovskite structure substrates [ 32 , 54 ]. There are a number of studies describing the influence of the deposition temperature on the properties of oriented BST films grown on lanthanum aluminate, magnesium oxide and sapphire orienting sublayers [ 55 ]; Pt/Ti-buffered sapphire substrate [ 56 ]; semi-insulating silicon carbide [ 57 ] or diamond substrate with a SiC buffer layer [ 58 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Spectroscopic Insight into Acceptor-Modified Barium Strontium Titanate Thin Films Deposited via the Sol–Gel Method

Czekaj,

Lisińska-Czekaj

2024

Materials

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In the present paper, composite thin films of barium strontium titanate (BaxSr1−xTiO3) with an acceptor modifier (magnesium oxide—MgO) were deposited on metal substrates (stainless steel type) using the sol–gel method. The composite thin films feature BaxSr1−xTiO3 ferroelectric solid solution as the matrix and MgO linear dielectric as the reinforcement, with MgO concentrations ranging from 1 to 5 mol%. Following thermal treatment at 650 °C, the films were analyzed for their impedance response. Experimental impedance spectra were modeled using the Kohlrausch–Williams–Watts function, revealing stretching parameters (β) in the range of approximately 0.78 to 0.89 and 0.56 to 0.90 for impedance and electric modulus formalisms, respectively. Notably, films modified with 3 mol% MgO exhibited the least stretched relaxation function. Employing the electric equivalent circuit method for data analysis, the “circle fit” analysis demonstrated an increase in capacitance from 2.97 × 10−12 F to 5.78 × 10−10 F with the incorporation of 3 mol% MgO into BST-based thin films. Further analysis based on Voigt, Maxwell, and ladder circuits revealed trends in resistance and capacitance components with varying MgO contents, suggesting non-Debye-type relaxation phenomena across all tested samples.

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Tunability of band-gap in barium strontium titanate films on anodic aluminum oxide templates

Yan

Wang

et al. 2018

Thin Solid Films

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Thin film ferroelectric structures on diamond for high power microwave applications

Cited by 4 publications

References 41 publications

Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications

Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications

Enhanced Spectroscopic Insight into Acceptor-Modified Barium Strontium Titanate Thin Films Deposited via the Sol–Gel Method

Tunability of band-gap in barium strontium titanate films on anodic aluminum oxide templates

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