2022
DOI: 10.1002/adma.202108841
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Thin‐Film Ferroelectrics

Abstract: non-centrosymmetric structures which can possess a spontaneous electric polarization which can be controlled using applied electric fields (Figure 1). Ferroelectrics themselves are inherently hierarchical materials-wherein picometer ionic displacements give rise to polarization which can collectively extend over millimeters or self-organize into complex mesoscopic structures or collectively reorient under applied stimuli (e.g., electric fields, temperature, or stress). Understanding these complex behaviors nec… Show more

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Cited by 65 publications
(19 citation statements)
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References 489 publications
(732 reference statements)
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“…This emerging ability to directly integrate a strongly hysteretic nonlinear dielectric is transformational for future logic, memory, high-power, acoustic, or electro-optic devices ( 6 8 ). These ferroelectrics, however, bring their own challenges, the most notable being that the margin between the coercive field and breakdown field is uncomfortably small at room temperature.…”
mentioning
confidence: 99%
“…This emerging ability to directly integrate a strongly hysteretic nonlinear dielectric is transformational for future logic, memory, high-power, acoustic, or electro-optic devices ( 6 8 ). These ferroelectrics, however, bring their own challenges, the most notable being that the margin between the coercive field and breakdown field is uncomfortably small at room temperature.…”
mentioning
confidence: 99%
“…Ferroelectric materials have drawn significant attention for non‐volatile memory (NVM) devices because they exhibit bistable electric polarization states that can be switched by an external electric field 1 . Although commercial ferroelectric NVM devices are based on a ferroelectric capacitor for information storage and a transistor connected in series, such device architecture is limited by the destructive readout process 2,3 .…”
Section: Introductionmentioning
confidence: 99%
“…Ferroelectric materials have drawn significant attention for non-volatile memory (NVM) devices because they exhibit bistable electric polarization states that can be switched by an external electric field. 1 Although commercial ferroelectric NVM devices are based on a ferroelectric capacitor for information storage and a transistor connected in series, such device architecture is limited by the destructive readout process. 2,3 Ferroelectric field effect transistors (FeFETs), where a ferroelectric film is directly integrated as the gate dielectric of the FET to modulate the channel conductance, can address this challenge and are also advantageous for device downscaling.…”
Section: Introductionmentioning
confidence: 99%
“…Innovation in energy storage technology is a key to tackling energy and environmental issues, such as the ever-increasing demands for electrical energy and achievement of sustainable development goals (SDGs). Dielectric capacitors have been regarded as attractive options in this regard; they exhibit distinctive features of ultrahigh power densities (fast charge–discharge rates) and good stability, and they do not utilize chemical reactions during cycling, unlike batteries. Dielectric capacitors can thus become ideal, safe, all-solid-state energy storage devices. However, the energy densities of current dielectrics fall significantly short of meeting the increasing demands for electrical energy; their energy densities are 1–2 orders of magnitude lower than those of batteries , and supercapacitors. , To overcome this issue, tremendous efforts have been dedicated to developing new dielectric materials with enhanced energy densities.…”
mentioning
confidence: 99%