2006
DOI: 10.1002/pssc.200669653
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Thin film formation by rf sputtering with EuGa 2 S 4 target and photoluminescence of the prepared films

Abstract: Thin films were deposited on Si and fused quartz substrates by rf sputtering with EuGa 2 S 4 target. The deposited films were annealed in the mixed atmosphere of S and He, which led crystallization of the film from amorphous phase. Photoluminescence of the annealed films, characteristic to the Eu 2+ ion, was observed with room temperature quantum efficiency of 17%. Decay time constants at room temperature and liquid nitrogen temperature were measured to be 140 ns, and 430 ns, respectively. The latter value is … Show more

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