Thin-film formation using single-grid ion-beam sputtering

Abstract

This paper discusses fundamental characteristics of a single-grid ion-beam sputtering system as well as indicating the optimum aperture dimensions and transparency of a grid. With an optimum thickness and aperture size, a high deposition rate of over 90 nm/min and a grid lifetime of over 10 h were obtained at an accelerator voltage of <600 V. The effect of the accelerator voltage or the beam current on the thin-film properties were investigated and it was clarified that films prepared with a lower accelerator voltage or lower beam current are likely to become amorphous.

Silicon (110) grid for ion beam processing systems

“…Ion beam processing systems are widely used because they produce good-quality film due to the low energy of the ion beam, offer increased deposition freedom by sample stage rotation, tilting and control of the beam profile, and are easy to use [1,2]. Such systems allow us to independently control individual factors such as gas pressure, accelerating voltage, beam currents, and beam incident angle relative to the sample or target.…”

“…The timely stability of the beam profile is governed by changes of grid geometry, deformation due to heat, and changes in the thickness and open area of the grid. Conventional carbon or SUS grids [1] cannot satisfy the requirements for both a high etching rate and long life span. It is difficult to make a carbon grid with a greater wide open area, although they do have the advantages of small deformation and a long life span.…”