Thin film GaAs solar cell enabled by direct rear side plating and patterned epitaxial lift-off

Wulf, Jana; Oliva, E.; Mikolasch, Gabriele; Bartsch, Jonas; Dimroth, Frank; Helmers, Henning

doi:10.1109/pvsc43889.2021.9518788

Cited by 6 publications

(2 citation statements)

References 15 publications

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“…The resulting Power Converter Performance Chart [41] clearly highlights that multijunction OPCs are required for obtaining not only high conversion efficiencies, but also high output powers. The research related to photovoltaic devices suggests other potential future device improvements [48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66][67], optical wireless power transmission applications [68][69][70][71][72][73][74], and system design strategies [75][76][77][78].…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm

Fafard

Masson

2022

Photonics

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The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input of around 1470 nm. The InP-based photovoltaic power converting III-V semiconductor devices are designed here, with 10 lattice-matched subcells (PT10-InGaAs/InP), using thin InGaAs absorbing layers connected by transparent tunnel junctions. The results confirm that such long-wavelength power converter devices are capable of producing electrical output voltages greater than 4–5 V. The characteristics are compatible with common electronics requirements, and the optical input is well suited for propagation over long distances through fiber-based optical links. Conversion efficiencies of ~49% are measured at electrical outputs exceeding 7 W for an input wavelength of 1466 nm at 21 °C. The Power Converter Performance Chart has been updated with these PT10-InGaAs/InP results.

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Section: Introductionmentioning

confidence: 99%

High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm

Fafard

Masson

2022

Photonics

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“…Our recent Power Converter Performance Chart [41,47] clearly highlights that multijunction OPCs are most advantageous to obtain high device performance. The research related to photovoltaic devices also suggests other potential future device improvements [48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66][67], as well as new optical wireless power transmission (OWPT) applications and design strategies for future systems [68][69][70][71][72][73][74][75][76][77][78].…”

Section: Introductionmentioning

confidence: 99%

74.7% Efficient GaAs-Based Laser Power Converters at 808 nm at 150 K

Fafard

Masson

2022

Photonics

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High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5 thin subcells (PT5), connected by transparent tunnel junctions. Unprecedented conversion efficiencies of up to 74.7% are measured at temperatures around 150 K. At temperatures around 77 K, a remarkably low bandgap offset value of Woc = 71 mV is obtained at an optical input intensity of ~7 W/cm2. At 77 K, the PT5 retains an efficiency of 65% with up to 0.3 W of converted output power.

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