Thin film growth on an O-precovered Ru(0001) surface

Coadsorption of oxygen, gold and carbon monoxide on Ru(0001) and CO2 formation: A thermal desorption study

“…From our TPD data (Figs. 1 and 2), oxygen (including subsurface oxygen) starts to desorb at >900 K, without any detectable peak in the range of 350-900 K. In a study of Cu growth on O/Ru(0 0 0 1), a similar double peak structure for O desorption reported upon Cu deposition was due to the formation of Cu oxide [36]. The formation of Au oxide on our surface is less possible than Cu, owing to the lower reactivity of Au.…”

“…1a shows the oxygen desorption traces between 850 K and 1450 K from Au grown on O 1/2 / Ru at 750 K for increasing Au coverage. Compression of surface oxygen by coadsorbed Au has been suggested [35,36] and confirmed directly by STM [37] to explain changes in desorption behavior of gold and oxygen. A double peak structure (a and b) of compressed oxygen is seen at h Au = 0.3-2.5 ML in Fig.…”

Surfactant-assisted atomic-level engineering of spin valves

“…5,6 Since it was first suggested and experimentally demonstrated that adsorbate layers which float or segregate out to the surface during overlayer growth may be able to favorably alter epitaxial growth, a rapid development of this approach was witnessed in the field of semiconductors, 7-14 and metal-on-metal epitaxy. 5,6,[15][16][17][18][19][20] More recently, surfactants were also shown to favorably alter elementary deposition steps in polycrystalline multilayers. [21][22][23][24][25][26] Whereas it has been variously shown that deliberately adsorbed surfactants can be used to gain control over the growth of one layer over another, this is only a first step toward the goal of atomically engineered layered structures.…”

Oxidation electronics: bond–band–barrier correlation and its applications

“…AES [363], ICISS [242], work function measurements [198,364] and STM observations [241,365] have revealed that oxygen atom is always present on the surface of the grown Cu films deposited on an oxygen pre-covered Ru(0001) surface. Under certain conditions (Y O =0.2-0.4 ML, T $ 400 K), the work function, monitored during film deposition, oscillates with a period of one monolayer of copper epitaxial growth.…”