Thin-Film Immunoassays

Danielson, Susan J.

doi:10.1016/b978-012214730-2/50023-6

Cited by 4 publications

(2 citation statements)

References 26 publications

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“…Two major problems are the presence of small spurious electromotive forces (emfs) generated in the measuring circuit and the difficulty of measuring the temperature and Seebeck voltage at exactly the same point of the sample and the same time. The integral method largely overcomes the problems because of the large Seebeck voltage or difference potential generated by large temperature difference [4][5][6]. However, the sample preparation may be difficult.…”

Section: Methodsmentioning

confidence: 99%

Designing Apparatus for Highly Precise Measurement of Electrical Conductivity and Seebeck Coefficient from 85 K to 1200 K

Budngam

Wichainchai

Pimmongkol

et al. 2013

AMR

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We describe the development of apparatus for measuring of electrical conductivity and Seebeck coefficient with high precision from 85 K to 1,200 K. Electrical resistance was measured by means of four-point probe method as a function of temperature. The temperature below 400 K was measured by using type T thermocouple in vacuum system was used and from 400 to 1,200 was measured by using Type S was applied for temperature between 400 and 1200 Kelvin in an inert gas system. With the dimensions of the specimen, the electrical resistivity (ρT) can be obtained in the unit of microohm-centimeter (μΩ-cm) and be written in polynomial, ρT=-0.3191+6.8×10-3T-6.0×10-7 T2+8.0×10-10T3. The electrical conductivity can be obtained by taking inversion of the electrical resistivity. Seebeck coefficient (αT ) can be calculated in microvolt per Kelvin as follows: αT=1.9653-1.49×10-2T+9.0×10-5T2-2.0×10-7T3+2.0×10-10T4-1.0×10-13T5+3.0×10-17T6 , when T is temperature in K. The Seebeck coefficient data was compared with X-ray diffraction (XRD) and X-ray fluorescence (XRF) of the specimen. The result showed that our developrd apparatus yields the same as standard method when copper with purity greater than 99 percent was employed.

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Section: Methodsmentioning

confidence: 99%

Designing Apparatus for Highly Precise Measurement of Electrical Conductivity and Seebeck Coefficient from 85 K to 1200 K

Budngam

Wichainchai

Pimmongkol

et al. 2013

AMR

View full text Add to dashboard Cite

show abstract

“…This method is used for the characterization of chromophores, which are too opaque to permit the conventional use of UV-vis spectroscopy. 50,51 The CNO and CNO:P3HT layers were studied by DRS in the range between 280 and 850 nm ( Fig. SI1 †).…”

Section: Photophysical Properties Of Cno-fc Derivativesmentioning

confidence: 99%