Thin-film MCM-D technology with through-substrate vias for the integration of 3D SiP modules

Posada, G.; Carchon, G.; Nauwelaers, Bart; Raedt, W. De

doi:10.1109/ectc.2008.4550268

Cited by 12 publications

(6 citation statements)

References 13 publications

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“…Therefore, the choice of the appropriate board technology is essential for achieving maximum bandwidth. An example is the MCM-D approach (e.g., [12], [13]), which allows for much smaller pad size and pitch than the common printed circuit boards, though at higher cost. See [14] for a more comprehensive overview on the board technologies.…”

Section: Bandwidth Limitation Of An Interconnect: Basic Consideramentioning

confidence: 99%

Connecting Chips With More Than 100 GHz Bandwidth

et al. 2021

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Section: Bandwidth Limitation Of An Interconnect: Basic Consideramentioning

confidence: 99%

Connecting Chips With More Than 100 GHz Bandwidth

et al. 2021

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“…Moreover, problems resulting from the cross talk between the chips when attached face to face can also be avoided. Though a lot of work has been conducted on TSV [7][8][9][10], its application in industry is still limited due to the immature process and the considerably high cost. Furthermore, for the SiP with multiple microwave monolithic integrated circuit (MMIC) chips, it suffers from the high signal dissipation arising from the substrate loss of silicon in microwave band and the difficulty to form a low-loss transmission structure adapted in high frequency, such as the coaxial line.…”

Section: Introductionmentioning

confidence: 99%

A novel wafer-level metal/BCB interconnection between both sides of wafer using TSV and its microwave performance

Tang

Chen

et al. 2012

2012 IEEE 62nd Electronic Components and Technology Conference

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In this paper, a novel metal/BCB interconnection structure using through silicon via (TSV) to achieve integration on both sides of the Si wafer are proposed. It is composed of BCB/metal multilayers, high-resistivity silicon substrate with TSV. To reduce the transmission loss in microwave frequency, not only the high-resistivity silicon is used, but also a special TSV structure with the grounded shielding vias around the core via is adopted. Microstrip line (MSL) is used to transmit high-frequency signal on package plane together with the low-permittivity intermediate dielectric polymer, BCB. Descriptions on the interconnection structure and the process are included. The test vehicle, MSLs on both sides of the wafer connected by TSVs is measured up to 35GHz. The results of both the simulation and the measurement are presented. The results verify that the integration technology has a prospect in high-density wafer-level integration in microwave band.

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“…To achieve these goals, one of crucial points is the integration of passive devices in system integration because passives usually have greater effect on overall performance compared to active devices (Bennett et al 2005). One of the emerging integration technologies, System-in-Package (SiP), offers a perspective solution which can emancipate passives from the chip and integrate them into the package (Posada et al 2008).…”

Section: Introductionmentioning

confidence: 99%

Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP

et al. 2011

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This paper presents an integration technology for RF passives using benzocyclobutene (BCB)/metal multilayer interconnection for system-in-package applications. This technology has been specially developed for RF subsystem packages in which a thick polymer, BCB (more than 15 lm thick), is adopted as dielectric with lossy silicon as substrate for its excellent characteristics. Both dryetch BCB and photosensitive BCB are applied in this work, and their processes are briefly introduced and compared. An RF power divider, an MIM capacitor, different types of RF inductors as well as a coupled microstrip based bandpass filter are fabricated and measured at wafer level. The results show good electrical performances, and accordingly the passives are well applicable in RF band. Moreover, the subsystem models including monolithic chips connected with passives are presented.

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Thin-film MCM-D technology with through-substrate vias for the integration of 3D SiP modules

Cited by 12 publications

References 13 publications

Connecting Chips With More Than 100 GHz Bandwidth

Connecting Chips With More Than 100 GHz Bandwidth

A novel wafer-level metal/BCB interconnection between both sides of wafer using TSV and its microwave performance

Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP

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