Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates

Gordon, Ivan; Vallon, S.; Mayolet, Alexandre; Beaucarne, G.; Poortmans, Jef

doi:10.1016/j.solmat.2009.08.015

Cited by 38 publications

(14 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Epitaxial growth of thin films can be achieved through chemical vapor deposition (CVD) or vapor phase epitaxy, a modified CVD technique. There are variants of these techniques, which are used depending on the conditions required by the gaseous precursors: for example, atmospheric pressure chemical vapor deposition (APCVD) is usually used with trichlorosilane (SiHCl 3 ) as the precursor , and low‐pressure chemical vapor deposition is used with silane (SiH 4 ) as the precursor .…”

Section: Introductionmentioning

confidence: 99%

Pressure Dependence of Rate Coefficients for Formation and Dissociation of Pentachlorodisilane and Related Chemical Activation Reactions

Noda

Kunioshi

Fuwa

2017

Int. J. Chem. Kinet.

View full text Add to dashboard Cite

Four entrance channels to the pentachlorodisilane (Si2HCl5) potential energy well, namely, SiCl2 + SiHCl3, SiCl4 + SiHCl, Cl3SiSiCl + HCl, and SiCl3 + SiHCl2, were analyzed in detail through transition state theory, Rice–Ramsperger–Kassel–Marcus (RRKM) theory, and solution of the multichannel master equation. The stationary points in the potential energy surface were optimized, and their vibrational frequencies and rotational constants calculated at the (U)B3LYP/6–31+G(d,p) level of theory; the (U)CCSD(T)/aug‐cc‐pVTZ level was then used for accurate estimation of activation energies. The pressure and temperature dependence of the rate coefficients of the channels related to Si2HCl5 stabilization/dissociation was determined along a wide range of conditions, for the first time. All channels showed strong pressure dependence in the four cases, at least at low‐to‐moderate pressure conditions. Each entrance channel leads to the formation of different products under different conditions, and the mechanism was analyzed in detail. The results indicated that at atmospheric pressure the reactions are in the falloff region, and therefore do not support the adoption of high‐pressure limit rate coefficients in reaction models designed for simulation of systems at atmospheric or subatmospheric pressure conditions.

show abstract

Section: Introductionmentioning

confidence: 99%

Pressure Dependence of Rate Coefficients for Formation and Dissociation of Pentachlorodisilane and Related Chemical Activation Reactions

Noda

Kunioshi

Fuwa

2017

Int. J. Chem. Kinet.

View full text Add to dashboard Cite

show abstract

“…The well-adopted technique for the fast-rate Si epitaxy is thermal chemical vapor deposition and a deposition rate on the order of 10 nm s −1 is attained [3, 4]. However, the production yield of Si from trichlorosilane (SiHCl 3 : TCS) is limited to 30% because this process is primarily based on the equilibrium chemistries.…”

Section: Introductionmentioning

confidence: 99%

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

Sawada

Ichimaru

et al. 2014

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

Homoepitaxial Si films have been deposited at a high rate of 200 nm s−1 over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1–0.3 nm (1 × 1 μm2) and a Hall mobility of ∼240 cm2 V−1 s−1. The results suggested that under the MPCVD the deposition precursors formed at the plasma edge could be small enough not to influence either epitaxial film structure or the film quality provided the substrate temperature is maintained above 500 °C.

show abstract

“…Among various Si epitaxial technologies, thermal chemical vapor deposition (CVD) has been the major approach for the fast-rate Si epitaxy [1][2][3]. However, since the Si growth in this process is basically controlled by the equilibrium chemical reactions at Si surface, the Si materials yield from trichlorosilane (SiHCl 3 : TCS) is practically limited to about 25% as silicon tetrachloride (SiCl 4 ) is the most stable phase at the practical deposition temperature.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl₃ by Mesoplasma Chemical Vapor Deposition

Kambara²,

Yoshida³

2014

Proceedings of the 12th Asia Pacific Physics Conference (APPC12)

View full text Add to dashboard Cite

Epitaxial Si thick films have been deposited by mesoplasma chemical vapor deposition with SiHCl 3 -H 2 -Ar gas mixtures at high efficiency. Addition of hydrogen has been revealed to increase the deposition efficiency by removing Cl as a form of HCl. It also promotes the surface migration of deposition precursors for the attainment of epitaxial Si films. As a result, epitaxial Si films with a production yield of about 60% and a deposition rate of 430 nm/s were deposited at a H 2 /TCS ratio of 2-3.

show abstract

Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates

Cited by 38 publications

References 15 publications

Pressure Dependence of Rate Coefficients for Formation and Dissociation of Pentachlorodisilane and Related Chemical Activation Reactions

Pressure Dependence of Rate Coefficients for Formation and Dissociation of Pentachlorodisilane and Related Chemical Activation Reactions

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl₃ by Mesoplasma Chemical Vapor Deposition

Contact Info

Product

Resources

About

Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates

Cited by 38 publications

References 15 publications

Pressure Dependence of Rate Coefficients for Formation and Dissociation of Pentachlorodisilane and Related Chemical Activation Reactions

Pressure Dependence of Rate Coefficients for Formation and Dissociation of Pentachlorodisilane and Related Chemical Activation Reactions

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl3 by Mesoplasma Chemical Vapor Deposition

Contact Info

Product

Resources

About

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl₃ by Mesoplasma Chemical Vapor Deposition