Thin Film Multilayer Capacitors

Kambara, Hiroyuki; Schneller, Theodor; Waser, Rainer

doi:10.1007/978-3-211-99311-8_22

Cited by 4 publications

(3 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While research on high-κ capacitors in DRAMs has been very active in past decades, the application of high-κ capacitors as charge storage capacitors in FPDs is relatively new, and only a handful of studies on it could be found in literature. The high-κ capacitor materials for MLCC have been limited to (cation-doped) BaTiO 3 powders for a long time due to their historical background, but the thin-film-type MLCC recently started attracting greater interest. , However, the required electrical performance levels for each device application are very diverse due to the highly disparate operating conditions, such as the device voltage, clock speed, and allowed charge loss. The charge storage capacitor in FPDs has generally different specifications from the capacitors for DRAM.…”

Section: Introductionmentioning

confidence: 99%

Structure and Electrical Properties of Al-Doped HfO₂ and ZrO₂ Films Grown via Atomic Layer Deposition on Mo Electrodes

Yoo

Jeon

Lee

et al. 2014

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the evolutions of their crystallographic phases, grain sizes, and electric properties, such as their dielectric constants and leakage current densities, were examined for their applications in high-voltage devices. The film thickness and Al-doping concentration were varied in the ranges of 60-75 nm and 0.5-9.7%, respectively, for AHO and 55-90 nm and 1.0-10.3%, respectively, for AZO. The top and bottom electrodes were sputtered Mo films. The detailed structural and electrical property variations were examined as functions of the Al concentration and film thickness. The AHO films showed a transition from the monoclinic phase (Al concentration up to 1.4%) to the tetragonal/cubic phase (Al concentration 2.0-3.5%), and finally, to the amorphous phase (Al concentration >4.7%), whereas the AZO films remained in the tetragonal/cubic phase up to the Al concentration of 6.4%. For both the AHO and AZO films, the monoclinic and amorphous phases had dielectric constants of 20-25, and the tetragonal/cubic phases had dielectric constants of 30-35. The highest electrical performance levels for the application to the high-voltage charge storage capacitors in flat panel displays were achieved with the 4.7-9.7% Al-doped AHO films and the 2.6% Al-doped AZO films.

show abstract

Section: Introductionmentioning

confidence: 99%

Structure and Electrical Properties of Al-Doped HfO₂ and ZrO₂ Films Grown via Atomic Layer Deposition on Mo Electrodes

Yoo

Jeon

Lee

et al. 2014

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…We propose that the latter description occurs during cationic solution preparation. Then, the thin-film deposition initiates after the glass substrate is introduced into the cationic solution, where the complexed aqueous ions are adsorbed to the glass surface via the negative charges present in the surface of the glass substrate. − At this point, with the immersion of the substrate in the cationic solution, we have a tightly adsorbed layer of complexed ions on the surface of the substrate, accompanied by loosely adsorbed complexed ions, as shown in the first schematic (top left corner) of Figure , as is expected for the first step of the SILAR methodology. Collectively, the complexed ions that can be formed with ammonium and TEA are termed [ZnL] 2+ and [CuL] 2+ .…”

Section: Resultsmentioning

confidence: 76%

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Cabrera-German,

Martínez-Gil,

Fuentes-Ríos

et al. 2023

ACS Omega

View full text Add to dashboard Cite

Careful analysis of the chemical state of Cu x Zn 1– x S thin films remains an underdeveloped topic although it is key to a better understanding of the phase transformations and the linking between structural and optoelectronic properties needed for tuning the performance of Cu x Zn 1– x S-based next-generation energy devices. Here, we propose a chemical formulation and formation mechanism, providing insights into the successive ionic layer adsorption and reaction (SILAR) processing of Cu x Zn 1– x S, in which the copper concentration directly affects the behavior of the optoelectronic properties. Via chemical, optoelectronic, and structural characterization, including quantitative X-ray photoelectron spectroscopy, we determine that the Cu x Zn 1– x S thin films at low copper concentration are composed of ZnS, metastable Cu x Zn 1– x S, and CuS, where the evidence suggests that a depth compositional gradient exists, which contrasts with homogeneous films reported in the literature. The oxidation states for copper and sulfide species indicate that the films grow following a formation mechanism governed by ionic exchange and diffusion processes. At high copper concentrations, the Cu x Zn 1– x S thin films are covellite CuS that grew on a ZnS seed layer. Hence, this work reiterates that future research related to fine-tuning the application of this material requires a careful analysis of the depth-profile compositional and structural characteristics that can enable high conductivity and transparency.

show abstract

“…The production of high-quality thin films has become a crucial step in advancing the technological applications of materials, leading to an active research area in which traditional high-vacuum deposition methods compete with more cost-effective chemical deposition techniques. Addressing the essential requirements of stoichiometry control, scalability, and high throughput for practical applications, chemical solution deposition methods for thin film growth demonstrate substantial potential. − Moreover, in the wake of the increasing demand for sustainable and environmentally friendly reactants and processes, polymer-assisted deposition (PAD) is very attractive. , PAD involves the use of aqueous solutions containing environmentally friendly metal salts and commercially available polymers. Specifically, the metal ions (typically in the form of nitrate or chloride salts) are coordinated with lone-pair electrons of the nitrogen atoms in the polyethylenimine (PEI) polymer.…”

Section: Introductionmentioning

confidence: 99%

Tuning of Antiferromagnetic Phase in La_1–xSr_xMnO₃ Epitaxial Thin Films by Polymer-Assisted Deposition Synthesis

Toda-Casaban,

Frontera,

Pomar

et al. 2024

Crystal Growth & Design

View full text Add to dashboard Cite

Epitaxial thin films of the La 1−x Sr x MnO 3 system, spanning a wide range of compositions (0.5 ≤ x ≤ 0.65), have been prepared, using the polymer-assisted deposition method, on SrTiO 3 (100) substrates. The primary objective was to achieve the highly stable A-type antiferromagnetic (AF) phase associated with x = 0.5. However, the electronic and magnetic properties of the samples, with different substitution levels of La with Sr, exhibit deviations from the anticipated behavior according to the bulk phase diagram. Employing X-ray absorption spectroscopy, we demonstrate that the effective 0.5:0.5 ratio of Mn 3+ :Mn 4+ is actually attained in the sample with x = 0.65, suggesting the presence of an alternative charge compensation mechanism. High oxygen pressure annealing processes allow us to demonstrate that oxygen vacancies, generated to accommodate the epitaxial structural strain, are responsible for the partial charge compensation and the observed deviations from the bulk phase diagram.

show abstract

Thin Film Multilayer Capacitors

Cited by 4 publications

References 41 publications

Structure and Electrical Properties of Al-Doped HfO₂ and ZrO₂ Films Grown via Atomic Layer Deposition on Mo Electrodes

Structure and Electrical Properties of Al-Doped HfO₂ and ZrO₂ Films Grown via Atomic Layer Deposition on Mo Electrodes

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Tuning of Antiferromagnetic Phase in La_1–xSr_xMnO₃ Epitaxial Thin Films by Polymer-Assisted Deposition Synthesis

Contact Info

Product

Resources

About

Thin Film Multilayer Capacitors

Cited by 4 publications

References 41 publications

Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes

Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes

Insights into the SILAR Processing of CuxZn1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Tuning of Antiferromagnetic Phase in La1–xSrxMnO3 Epitaxial Thin Films by Polymer-Assisted Deposition Synthesis

Contact Info

Product

Resources

About

Structure and Electrical Properties of Al-Doped HfO₂ and ZrO₂ Films Grown via Atomic Layer Deposition on Mo Electrodes

Structure and Electrical Properties of Al-Doped HfO₂ and ZrO₂ Films Grown via Atomic Layer Deposition on Mo Electrodes

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Tuning of Antiferromagnetic Phase in La_1–xSr_xMnO₃ Epitaxial Thin Films by Polymer-Assisted Deposition Synthesis