Thin Film Plate Wave Resonant Sensor for Pressure and Gravimetric Measurements

Anderås, Emil; Arapan, Lilia; Katardjiev, Ilia; Yantchev, Ventsislav

doi:10.1016/j.proeng.2011.12.142

Cited by 2 publications

(1 citation statement)

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“…Hence, for each kind of device and particular use, the response to a given stress has to be individually analysed. Pressure sensors based on film bulk acoustic resonators (FBAR) [2,3], Lamb wave resonators [4], and thin film surface acous-tic wave (SAW) resonators [5,9] have been reported previously. Strain sensors, intended for harsh environments or requiring high response speed (i.e.…”

Section: Introductionmentioning

confidence: 99%

Frequency response of AlN-based solidly mounted resonators under mechanical stress

Clément

Delicado

Olivares

et al. 2017

Sensors and Actuators A: Physical

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We analyse the performance of solidly mounted bulk acoustic wave resonators under induced mechanical stress to explore their viability as strain sensors. The resonators are made of polycrystalline AIN piezoelectric thin films containing uniformly tilted microcrystals to excite both longitudinal and shear modes. The resonators are grown on top of silicon bars that are fixed at one or two edges using two home-made apparatus specifically designed to induce deformations of several hundreds of microstrains. The induced strain causes frequency shifts of tenths of MHz, yielding strain coefficients of the resonant frequency (SCF) up to-71% per unit strain (-0.71 ppm/fie). The influence of the nature of the resonant mode (shear of longitudinal), the electromechanical coupling factor and the operation frequency on the SCF is analysed.

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