Thin Film Polycrystalline Silicon Solar Cells

Beaucarne, G.; Slaoui, A.

doi:10.1002/0470091282.ch3

Cited by 16 publications

(14 citation statements)

References 13 publications

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“…The most known crystallization techniques that can be used to produce poly-Si thin films [8,9] are: zone melting crystallization, laser induced crystallization, solid phase crystallization (SPC) and metal induced crystallization (MIC). Among these methods, SPC yields poly-Si films having grain sizes of around 1-3μm after long annealing durations of a-Si between 24 h and 48 h [16,17].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…Among these metals, Al does not lead to a contamination in the material and it forms the optimal energy level for the charge carriers compared to other metals [18]. The crystallization of a-Si by using Al is called the aluminium induced ctystallization (AIC) [9,18].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…Poly-Si thin films have 10 to 100 times higher mobility than a-Si thin films [8]. Poly-Si films deposited on a substrate combines the advantages of high efficiency, being cost effective and the stability of c-Si [9,10,11]. In addition to this, poly-Si films have the grain boundaries which are the electrical obstacles for the charge carriers and reasonable conversion efficiency values can be obtained by increasing the grain size [12].…”

Section: Introductionmentioning

confidence: 99%

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Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

et al. 2019

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Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of ~200nm and used as a seed layer, on silicon nitride coated glass substrate. Thanks to aluminium metal in AIC process, the natural doping of AIC thin films is p + type (~2×10 18 cm -3 ). On the other hand, recombination of carriers can be controlled by partial doping through the defects that may have advantages to improve the thin film quality by the overdoping induced passivation. In this study, boron (B) and phosphorus (P) doped AIC seed layers were thicken to ~2μm by solid phase epitaxy (SPE) technique at 800°C for 3 hours under nitrogen flow in a tube furnace. During the crystallization annealing, exodiffusion of dopants was formed through the SPE film from the AIC seed layer. Optical microscope and electron back scattering diffraction technique (EBSD) were used to analyse the structural quality of the Si films. The poly-Si layer with an average grain size value of ~32µm was formed by AIC+SPE technique for P doped samples while EBSD analysis gave no results for B doped samples due to the quite deterioration on the surface of the films. AIC+SPE films were analysed in terms of structural properties by using micro-Raman Spectroscopy and X-ray diffraction systems. The results showed that the crystallinity of compressive stress formed AIC+SPE films reached up to 98.55%. Additionally, the Raman analysis pointed out that no temperature-induced stress were generated in the AIC+SPE films while compressive stress was induced by increasing the annealing duration for doped AIC film. For all samples, the preferred orientation was <100>, and the crystallite size up to 44.4nm was formed by phosphorus doping of AIC films. The doping efficiency was determined by time-of-flight secondary ion mass spectroscopy for doped samples. A graded n + n doping profile was obtained by exo-diffusion of phosphorus from the overdoped seed layer during the epitaxial thickening while boron doping of SPE film has failed with exo-diffusion of boron from AIC seed layer into SPE film. Finally, high-quality n + n type poly-Si films were fabricated on glass substrate by using AIC+SPE technique.

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Section: Accepted Manuscriptmentioning

confidence: 99%

Section: Accepted Manuscriptmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

et al. 2019

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“…Optimum poly-Si ince film malzemelerin kalınlığı 1-4µm arasında olduğuna göre iyi bir poly-Si filmin ortalama tanecik büyüklüğü ≥2µm olmalıdır [10,11]. Poly-Si ince film malzemelerin üretimi için farklı kristalizasyon teknikleri kullanılabilir [5,7]: Bölgesel eritme kristalizasyonu (zone melting crystallization -ZMC), lazer indüklemeli kristalizasyon (laser induced crystallization -LIC), katı faz kristalizasyonu (solid phase crystallization -SPC) ve metal indüklemeli kristalizasyon (metal induced crystallization -MIC) bunların başlıcalarıdır. SPC tekniği bugüne kadar en yaygın kullanılan poly-Si film üretme yöntemidir [5,12].…”

Section: Farklı üRetim Parametrelerinin Katı Faz Kristalizasyon (Spc)unclassified

Farklı Üretim Parametrelerinin Katı Faz Kristalizasyon (SPC) Tekniği Kullanılarak Üretilen Polikristal Silisyum İnce Filmlerin Kalitesi Üzerine Etkileri

Özmen¹,

Sedani²,

Karaman³

et al. 2018

Journal of Polytechnic

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Bu makaleye şu şekilde atıfta bulunabilirsiniz(To cite to this article): Tüzün Özmen Ö., Sedani S. H., Karaman M., Gökşen K. ve Turan R., "farklı üretim parametrelerinin katı faz kristalizasyon (SPC) tekniği kullanılarak üretilen polikristal silisyum ince filmlerin kalitesi üzerine etkileri", Politeknik Dergisi, 22 (2): 469-475, (2019).Erişim linki (To link to this article): http://dergipark.gov.tr/politeknik/archive ÖZYüksek elektronik kaliteleri ve optimize edilmiş eklem yapıları nedeniyle SiNx kaplı cam alttaş üzerindeki polikristal silisyum (poly-Si) ince filmler, hacimsel silisyum bazlı güneş hücrelerine karşı umut vaat edici alternatif yaklaşımlardır. Bu çalışmada, poly-Si filmler katı faz kristalizasyonu (SPC) tekniği ile üretilmişlerdir. Filmler, klasik tüp fırında 600 o C'de 8-26 saat aralığında kristalleştirilmişlerdir. SiNx kaplı cam alttaş üzerindeki poly-Si ince filmlerin yapısal ve optiksel özellikleri araştırılmıştır. Poly-Si ince filmlerin yönelimi ve kristalit büyüklüğü X-ışını kırınımı (XRD) kullanılarak incelenirken filmlerin kristallenme derecesi mikro Raman spektroskopisi ile çalışılmıştır. Kristalizasyon süresinin filmin kalitesi üzerine önemli etkileri olduğu bulunmuştur. Deneyler sonucunda, tavlama süresi 8 saatten 26 saate arttırıldığında kristallenme derecesinin %10'dan %95'e arttığını göstermiştir. 600 o C'de kristallenen SPC poly-Si filmlerin tercihli yönelimi tüm tavlama zamanları için <111>'dir. Diğer yandan, artan tavlama süresi kristalit boyutunu 29,6nm'den 36,3nm'e büyütmüştür. Bu analizlere ek olarak, bu çalışmada, e-demeti sistemi ile büyütülen a-Si'un üretim esnasında kullanılan potanın SPC poly-Si filmin kristal kalitesi üzerine etkileri de araştırılmıştır. Sonuçlar göstermiştir ki e-demeti sisteminde kullanılan potanın malzemesinin grafit yerine molibden (Mo) olması gerektiği ve SPC tekniğini ile oluşturulan poly-Si filmlerin kalitesi üzerine önemli etkisi olduğu görülmüştür.Anahtar Kelimeler: İnce film, polikristal silisyum, katı faz kristalizasyon, üretim parametreleri. ABSTRACTPolycrystalline silicon (poly-Si) thin films on SiNx-coated glass substrates are the promising alternative approach to bulk silicon based solar cells thanks to those of the high electronic qualities and optimized junction structures. In this work, the poly-Si films have been fabricated by Solid Phase Crystallization (SPC) technique. The films were crystallized in a classical tube furnace at 600 o C for 8-26 hours. The structural and optical properties of poly-Si thin films on SiNx-coated glass substrates were investigated. The degree of crystallinity of films were studied by micro-Raman Spectroscopy while the orientation and the crystallite size of poly-Si thin films were studied using X-Ray Diffraction (XRD). It is found that crystallization duration has a great effect on the quality of the film. The results of experiments show that the degree of crystallinity increases from 10% to 95% by increasing the annealing duration from 8 hours to 26 hours. The preferential orientation of SPC poly-Si films cr...

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“…Various cell concepts and processes based on the deposition of silicon on non-silicon (i.e. foreign) low-cost substrates were developed and published in recent reviews [1,2].…”

Section: Introductionmentioning

confidence: 99%

Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer

Kunz

Hessmann

Auer

et al. 2012

Journal of Crystal Growth

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Thin Film Polycrystalline Silicon Solar Cells

Cited by 16 publications

References 13 publications

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

Farklı Üretim Parametrelerinin Katı Faz Kristalizasyon (SPC) Tekniği Kullanılarak Üretilen Polikristal Silisyum İnce Filmlerin Kalitesi Üzerine Etkileri

Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer

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