Thin film polycrystalline silicon solar cells on mullite ceramics

Focsa, A.; Gordon, Ivan; Auger, Jean-Marc; Slaoui, A.; Beaucarne, G.; Poortmans, Jef; Maurice, Claire

doi:10.1016/j.renene.2007.05.038

Cited by 19 publications

(12 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Monolithic mullite ceramics: The characteristics of monolithic mullite ceramics are influenced by amount, size, and distribution of mullite, and by the occurrence of coexisting phases and porosity. Typical applications are advanced refractories, crucibles, thermocouple tubes, heat exchangers, porous filters, catalyst supporting devices, substrates for silicon solar cells, hot gas filter candles, electronic packaging materials, optical materials, dental ceramic components, and antibacterial materials …”

Section: Introductionmentioning

confidence: 99%

“…Typical applications are advanced refractories, crucibles, thermocouple tubes, heat exchangers, porous filters, catalyst supporting devices, substrates for silicon solar cells, hot gas filter candles, electronic packaging materials, optical materials, dental ceramic components, and antibacterial materials. 3,[13][14][15][16][17][18] Mullite films and coatings: Metals and most non-oxide ceramics are susceptible to oxidation-induced degradation at high temperatures. A suitable way to achieve stability in oxidizing environments is the deposition of thin mullite layers on these materials by means of physical or chemical gas phase or by chemical deposition techniques.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Mullite: Crystal Structure and Related Properties

2015

View full text Add to dashboard Cite

Mullite is certainly one of the most important oxide materials for both conventional and advanced ceramics. Mullite belongs to the compositional series of orthorhombic aluminosilicates with the general composition Al 2 (Al 2+2x Si 2-2x )O 10-x . Main members are sillimanite (x = 0), stoichiometric 3/2-mullite (x = 0.25), 2/1-mullite (x = 0.40), and the SiO 2 -free phase ι-alumina (x = 1, crystal structure not known). This study gives an overview on the present state of research regarding single crystal mullite. Following a short introduction, the second part of the review focuses on the crystal structure of mullite. In particular, the characteristic mullite-type structural backbone of parallel chains consisting of edge-sharing MO 6 octahedra and their specific cross-linkage by TO 4 tetrahedra is explained in detail, the role of cation disorder and structural oxygen vacancies is addressed, and the possibility of cation substitution on different sites is discussed. The third part of the study deals with physical properties being relevant for technical applications of mullite and includes mechanical properties (e.g., elasticity, compressibility, strength, toughness, creep), thermal properties (e.g., thermal expansion, heat capacity, atomic diffusion, thermal conductivity), electrical conductivity, and optical properties. Special emphasis is put on structure-property relationships which allow for interpretation of corresponding experimental data and offer in turn the possibility to tailor new mullite materials with improved properties. Finally, the reported anomalies and discontinuities in the evolution of certain physical properties with temperature are summarized and critically discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mullite: Crystal Structure and Related Properties

2015

View full text Add to dashboard Cite

show abstract

“…Moreover, the high temperature deposition of thin film crystalline silicon layers on low-cost foreign substrates seems to be cost effective. Extensive efforts have been made using the substrates, which are stable at higher temperatures, namely ceramics like alumina [2], SiAlON [3], SiSiC [4], mullite [5], glass-ceramic [6], and metallic foils (ferritic steel-FS) [7]. However, alumina, glassceramic, and flexible metallic foils, which can also sustain high temperatures, offer many advantages over the other substrates.…”

Section: Introductionmentioning

confidence: 99%

Thin film silicon solar cells by AIC on foreign substrates

Prathap

Tüzün

Madi

et al. 2011

Solar Energy Materials and Solar Cells

Self Cite

View full text Add to dashboard Cite

“…1,2 Of all the CSiTF solar cell concepts being pursued, poly-Si thin-film solar cell technology combining ceramic substrates and rapid thermal chemical vapor deposition (RTCVD), which can fabricate large-grained poly-Si active layers at relatively high deposition rates (1 lm/min to 10 lm/min), may be one of the most feasible technological routes to realize industrial production. [3][4][5][6] In the scheme of the above-mentioned poly-Si thinfilm solar cell technology, the ceramic substrates need to be coated by barrier layers such as SiO 2 , SiN x , or SiO 2 /SiN x composite layers, to prevent impurities diffusing from the substrates to the active layers at high deposition temperature (>1000°C). Since the conversion efficiencies of polySi thin-film solar cells are largely determined by the crystallographic quality of the poly-Si active layers, study of the structural properties of poly-Si thin films deposited by RTCVD on barrier layers is very important.…”

Section: Introductionmentioning

confidence: 99%

Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions

Shen

Deng

et al. 2010

Journal of Elec Materi

View full text Add to dashboard Cite

Polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates by rapid thermal chemical vapor deposition (RTCVD) under nonideal conditions. Then, crystallographic defects in the poly-Si films were investigated by using transmission electron microscopy (TEM) and optical microscopy combined with defect etching. We found that as-deposited poly-Si films contain a lot of twin crystals, including first-order, second-order, third-order, and higher-order twinned crystals. Besides twinned crystals, stacking faults, dislocations, dislocation nets, dislocation loops, extended dislocations, and dislocation line arrays were also found. Finally, the origins of the defects were analyzed, being attributed to the peculiarities of the RTCVD-quartz growth system, stress caused by lattice and thermal mismatch, a huge temperature ramp, and nonideal deposition conditions. Although our experimental results cannot represent the crystallographic quality of poly-Si films prepared by RTCVD, they at least indicate what kinds and how many defects exist in poly-Si films when deposition conditions severely deviate from the optimum.

show abstract

Thin film polycrystalline silicon solar cells on mullite ceramics

Cited by 19 publications

References 10 publications

Mullite: Crystal Structure and Related Properties

Mullite: Crystal Structure and Related Properties

Thin film silicon solar cells by AIC on foreign substrates

Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions

Contact Info

Product

Resources

About