Thin film silicon solar cells by AIC on foreign substrates

Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness

“…In the AIC method, Si crystallizes at relativity low temperatures in the range of 400-500 1C, and large grains of tens of mm in size can be obtained even on non-lattice-matched substrates [9,10]. Therefore, the Si seed crystals fabricated by the AIC method seem to enable the growth of high-quality devices such as thin-film solar cells and thin-film transistors on low-cost glass substrates [11][12][13][14][15]. The crystal orientation is critical for device performances [16].…”

Reviews of methods to extract and store energy for solar-powered aircraft

“…These years, many institutions and scholars have dedicated great efforts to research the technologies about solar cells [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31], rechargeable batteries [32][33][34][35][36][37][38][39][40][41][42] and MPPT techniques [2,[43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58]. Besides, there are also several other methods in consideration, such as to extract energy from wind shear [59][60][61][62][63] and store e...…”

TEM analysis of Si thin films prepared by diode laser induced solid phase epitaxy at high temperatures

“…It was also shown, that SPE is suitable for producing crystalline silicon thin film solar cells based on a polycrystalline seed layer prepared by aluminum-induced crystallization [4,5] or by diode laser crystallization [6].…”