This paper presents the numerical analysis of cadmium telluride (CdTe) based solar cells using iron di silicide (FeSi2) as the second absorber layer and aluminum-doped zinc oxide (AZO) as the window layer. The photovoltaic performance of solar cells with Al/AZO/CdTe/FeSi2/Ni structure was analyzed and improved by SCAPS-1D software. When analyzing the influence of thickness and carrier concentration on the photovoltaic performance, it was found that the optimum values for the CdTe layer were 300 nm and 1015 cm-3, for the AZO layer they were 10 nm and 1018 cm-3, while for the FeSi2 layer they were 1 µm and 1018 cm-3. The defect density (Nt) at the AZO/CdTe and CdTe/FeSi2 interfaces was also analyzed, obtaining that the optimum value of Nt is 1010 cm-2 at both interfaces. Device optimization is achieved by obtaining a maximum Power Conversion Efficiency (PCE) of 27.22% with an open circuit voltage (Voc) of 0.63 V, a short circuit current density (Jsc) of 51.43 mA/cm2 and a fill factor (FF) of 83.06%, which makes FeSi2 a potential alternative for the development of CdTe-based solar cells due to its absorption of photons with lower energy wavelengths.