Thin film silicon compound growth mechanisms: CrSi2/Si(001)

Epitaxial growth of CrSi2 on Si(001) by template technique

“…Both epitaxy relationships have already been observed: orientation A by Heck et al [6] and orientation B by Shiau et al [5]. In our experiments CrSi 2 crystallites of both the orientations grow simultaneously.…”

“…However, only a few studies on the growth of CrSi 2 on the technologically relevant Si(0 0 1) have been published up to now. Shiau et al [5] reported on the film growth by performing Cr deposition at a substrate temperature of 300 C followed by annealing at 1000-1100 C. These films are oriented with CrSi 2 ð % 1 % 1 2Þ½1 % 1 0jjSið0 0 1Þ½1 % 1 0: A second orientation relation was found by Heck et al [6]: CrSi 2 (0 0 1)[1 1 0]JSi(0 0 1)[1 1 0]. These CrSi 2 layers have been grown by solid-phase reaction.…”

Surface morphology and the phase formation at Cr/Si system

“…electronic wavelength or magnetic domain width), new physical properties are expected that may lead to a new generation of electronic, optoelctronic and magnetic devices [12,13]. Various techniques have been used to prepare CrSi 2 films such as solid-state reaction [14], reactive deposition [15], reactive co-deposition of Cr and Si [16] and ion implantation [17,18]. Most of the studies have been carried out on the growth of CrSi 2 on Si (1 1 1) because the hexagonal CrSi 2 (0 0 1) face has a good lattice match to Si (1 1 1) face with its a-axis parallel to Si (1 1 0) and Si (1 0 1) [19].…”

“…For the transition metals, the silicon is the more diffusing species contrary to near-noble metals. Among these silicides the CrSi 2 compound has been intensively studied because of its 0.35 eV band gap, which gives perspective for the applications in optoelectronic devices, such as silicon-based photodetector [1][2][3]. Although there is a considerable sets of research devoted to the study of the growth phenomena in the relatively thick Cr-silicide films (with thickness of dozens to thousands Å ) [4][5][6] and elucidation of their structural, electrical and optical properties [7][8][9], but the work on very thin films (deposited amount is in range of few monolayers) of Cr on Si substrate is very limited [10].…”

Effect of P+ ions on the microstructure and the nature of the formed silicides in the Cr/Si system

“…For the transition metals, the silicon is the more diffusing species contrary to near-noble metals. Among these silicides the CrSi 2 compound has been intensively studied because its 0.35 eV bandgap gives perspective for the applications in optoelectronic devices, such as silicon-based photodetectors [3][4][5].…”