Thin-Film Transistors in Active-Matrix Liquid Crystal Displays (AMLCDs)

Libsch, F.

doi:10.1201/9780203911778.ch5

Cited by 3 publications

(3 citation statements)

References 32 publications

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“…T HIN-FILM transistors (TFTs) are ubiquitous devices that are mostly used in large-area electronics such as in pixel selection circuits of active matrix (AM) displays [1]. The unique requirements of this application, such as lowcost fabrication and compatibility with large-area electronics, can be satisfied currently using TFTs based on amorphous Si and organic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

High-Frequency ZnO Thin-Film Transistors on Si Substrates

Bayraktaroglu

Leedy

Neidhard

2009

IEEE Electron Device Lett.

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Record microwave frequency performance was achieved with nanocrystalline ZnO thin-film transistors fabricated on Si substrates. Devices with 1.2-μm gate lengths and Au-based gate metals had current and power gain cutoff frequencies of f T = 2.45 GHz and f max = 7.45 GHz, respectively. Same devices had drain-current on/off ratios of 5 × 10 10 , exhibited no hysteresis effects and could be operated at a current density of 348 mA/mm. The microwave performances of devices with 1.2-and 2.1-μm gate lengths and 50-and 100-μm gate widths were compared.Index Terms-FET, high frequency, microwave, nanocrystalline, on/off ratio, pulsed laser deposition, thin-film transistors (TFTs), ZnO.

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Section: Introductionmentioning

confidence: 99%

High-Frequency ZnO Thin-Film Transistors on Si Substrates

Bayraktaroglu

Leedy

Neidhard

2009

IEEE Electron Device Lett.

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“…Active electronic identification tags, for example, need sub-5 V operation [4], and OLEDs require high drive currents at typically less than 10 V [10]. For active-matrix driven LCDs, the static off-state current should be 0.1-1.0 pA [8].…”

Section: Overviewmentioning

confidence: 99%

Application of Transparent Oxide Semiconductors for Flexible Electronics

Carcia

2010

Transparent Electronics

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Electronics on flexible plastic substrates [1,2] are attractive for portable applications, because plastic is lighter weight, thinner, bendable, and more rugged than glass. Flexible plastic substrates can also be processed reel-to-reel, which should reduce manufacturing cost. Some applications envisioned for flexible electronics include (rollable) displays [3], low cost radio frequency identification (RFID) tags [4], and large area or macroelectronics [5], in general.Plastic substrates, however, are temperature sensitive. Common, inexpensive, plastic substrates, such as poly(ethylene terephthalate) (e.g. PET-Mylar Ò ), can withstand processing only up to $100 C, while poly(ethylene naphthalate) (PEN), in the same polyester family, can be used up to $200 C. (More detail about plastic substrates will be given later in this chapter). However, low mobility ($1 cm 2 V À1 s À1 ), amorphous silicon (a-Si) device technology [6,7], used in liquid crystal displays (LCDs) [8] for laptop computers and large screen flat-panel TVs, requires processing up to 350 C. Moreover, higher performance electronics, based on high mobility ($100 cm 2 V À1 s À1 ) polycrystalline Si technology [6,9], which drives newer organic light emitting displays (OLEDs) [10], require still higher process temperatures, $600 C. (A high mobility translates into a higher output current, and lower voltage and higher frequency operation). However, post-annealing processes used in Transparent Electronics: From Synthesis to Applications Edited by Antonio Facchetti and Tobin J. Marks

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“…As the size of display panels increase and higher video rates are used in current and future products, the demand on the transistor performance also increases. However, the current technologies have severe electronic limitations due to low carrier mobility, low current drive levels, and limited on/off current switching ratios (1), which limit their use in more advanced future systems. For example, the new Active Matrix (AM) flat panel display systems based on active light sources at each pixel such as Organic Light Emitting Diodes (OLED) demand even higher current density and higher video rate TFT operation than the current technologies can comfortably provide.…”

Section: Introductionmentioning

confidence: 99%

Pulsed Laser Deposited ZnO for Thin Film Transistor Applications

Bayraktaroglu

Leedy

2008

ECS Trans.

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The film growth conditions were optimized for pulsed laser deposited ZnO thin films for high performance field effect transistor applications. Transistors fabricated on Si and GaAs substrates with various gate lengths and gate widths and demonstrated current on/off ratios better than 1012, current density of >700mA/mm, sub-threshold gate voltage slope of 109mV/decade, current gain cutoff frequency of 500MHz, and power gain cutoff frequency of 400MHz (2um gate device).

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Thin-Film Transistors in Active-Matrix Liquid Crystal Displays (AMLCDs)

Cited by 3 publications

References 32 publications

High-Frequency ZnO Thin-Film Transistors on Si Substrates

High-Frequency ZnO Thin-Film Transistors on Si Substrates

Application of Transparent Oxide Semiconductors for Flexible Electronics

Pulsed Laser Deposited ZnO for Thin Film Transistor Applications

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