Thin Films and Superlattice Synthesis

Aruta, C.; Tebano, A.

doi:10.1002/9783527686605.ch07

Cited by 3 publications

(4 citation statements)

References 106 publications

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“…Amongst all the possible thin film fabrication technologies, pulsed laser deposition (PLD) has been generally applied to prepare high quality complex oxide films due to its flexibility [18,19]. It has been previously used to prepare SOFC cathodes in both the fundamental studies and in practical applications [20].…”

Section: Introductionmentioning

confidence: 99%

Textured Sr2Sc0.1Nb0.1Co1.5Fe0.3O6−2δ Thin Film Cathodes for IT-SOFCs

Zhu

Zhou

et al. 2019

Materials

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Reducing the operating temperature of solid oxide fuel cells (SOFCs) to intermediate (650–850 °C) or even lower levels (400–650 °C) is an important practical requirement. However, the main obstacle to lowering the operating temperature is the poor oxygen reduction reaction (ORR) activity on the cathode side and, therefore, it is essential to explore cathode materials with good ORR activity in these temperature ranges. In this work, we investigated the possibility of using Sr2Sc0.1Nb0.1Co1.5Fe0.3O6−2δ (SSNCF) as a suitable intermediate temperature cathode material. SSNCF thin films with different orientations were prepared using the pulsed laser deposition technique, and the relationship of the surface chemical states and ORR activity was discussed in terms of crystallographic orientation. The results showed that the SSNCF/YSZ grown along the [110] direction exhibited superior ORR activity compared to the SSNCF/SDC/YSZ thin film electrode grown along the [100] direction. This was explained by the variation in the Sr-surface enrichment and cobalt ion oxidation state using X-ray photoemission spectroscopy.

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Section: Introductionmentioning

confidence: 99%

Textured Sr2Sc0.1Nb0.1Co1.5Fe0.3O6−2δ Thin Film Cathodes for IT-SOFCs

Zhu

Zhou

et al. 2019

Materials

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confidence: 99%

“…The novel properties and functionalities of oxide thin films and interfaces foster the rapid development of thin-film growth techniques [1][2][3][4]. The state-of-art has evolved from the compositional control to the in situ control of the crystal growth [3]. Among the different techniques, pulsed laser deposition (PLD) is unique due to its convenience to grow films with complex compositions [4][5][6][7].…”

mentioning

confidence: 99%

“…Depending on the vacuum conditions and laser wavelength, the ablated plume contains species with energies up to several hundred eVs [11,12]. This distinguishes PLD from conventional thermal evaporation like molecular beam epitaxy (MBE) where the kinetic energy of species is typically between 0.1 and 0.3 eV, and evaporation rates are rather small [3,13]. Even though it has been reported that the energetic species in the plume may induce defect formation, ion implantation, and self-sputtering in particular if the laser fluence is too high [7,[14][15][16], a certain amount of energetic species in the plume are found to be beneficial.…”

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confidence: 99%

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Manipulation of ion energies in pulsed laser deposition to improve film growth

et al. 2019

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The growth and crystallinity of oxide thin films using a physical vapour deposition technique like molecular beam epitaxy (MBE) or pulsed laser deposition (PLD) is influenced by the flux of materials, the kinetic energy of species, and the substrate temperature. PLD is generating on a short time scale (µs) a large flux of materials, species with large kinetic energies (few eV up to several 10 eV), and requires often higher growth temperatures as compared to oxide MBE. Here, we show as a proof of principle that epitaxial TiO 2 thin films can be grown on LaAlO 3 (001) at a much-reduced deposition temperature of 300 °C by applying a bias voltage with respect to a grounded substrate. The controlled manipulation of ion energies with an applied electric field can allow to bridge the gap in growth conditions between PLD and oxide MBE.

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Dual pulsed laser deposition system for the growth of complex materials and heterostructures

Orgiani

Chaluvadi

Chalil

et al. 2023

Review of Scientific Instruments

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Here, we present an integrated ultra-high-vacuum (UHV) apparatus for the growth of complex materials and heterostructures. The specific growth technique is the Pulsed Laser Deposition (PLD) by means of a dual-laser source based on an excimer KrF ultraviolet and solid-state Nd:YAG infra-red lasers. By taking advantage of the two laser sources—both lasers can be independently used within the deposition chambers—a large number of different materials—ranging from oxides to metals, to selenides, and others—can be successfully grown in the form of thin films and heterostructures. All of the samples can be in situ transferred between the deposition chambers and the analysis chambers by using vessels and holders’ manipulators. The apparatus also offers the possibility to transfer samples to remote instrumentation under UHV conditions by means of commercially available UHV-suitcases. The dual-PLD operates for in-house research as well as user facility in combination with the Advanced Photo-electric Effect beamline at the Elettra synchrotron radiation facility in Trieste and allows synchrotron-based photo-emission as well as x-ray absorption experiments on pristine films and heterostructures.

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Thin Films and Superlattice Synthesis

Cited by 3 publications

References 106 publications

Textured Sr2Sc0.1Nb0.1Co1.5Fe0.3O6−2δ Thin Film Cathodes for IT-SOFCs

Textured Sr2Sc0.1Nb0.1Co1.5Fe0.3O6−2δ Thin Film Cathodes for IT-SOFCs

Manipulation of ion energies in pulsed laser deposition to improve film growth

Dual pulsed laser deposition system for the growth of complex materials and heterostructures

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