Bismuth vanadate (BiVO 4 ) has attracted increasing attention as a photoanode for photoelectrochemical (PEC) water splitting. It has a band gap in the visible light range (2.4−2.5 eV) and a valence band position suitable for driving water oxidation under illumination. While a number of methods have been used to make BiVO 4 photoanodes, scalable thin film deposition has remained relatively underexplored. Here, we report the synthesis of BiVO 4 thin films by reactive sputtering. The use of separate Bi and V sputtering targets allows control of the Bi/V ratio in the film. Under optimized, slightly V-rich conditions, monoclinic phase BiVO 4 with photoactivity for water oxidation is obtained. The highest photocurrents, ca. 1 mA cm −2 at the reversible O 2 /H 2 O potential with simulated AM 1.5G illumination, are obtained with bilayer WO 3 /BiVO 4 , where the WO 3 serves as a hole-blocking layer.