Thin films of In2O3 by atomic layer deposition using In(acac)3

Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

“…Table 1 shows the resistivity, carrier concentration and Hall mobility on the ALD In 2 O 3 thin film deposited at 275 1C. The measured resistivity is 9.2x  10 À 5 Ω cm, which is almost 1-3 orders of magnitude lower than that of previous ALD In 2 O 3 thin films grown using other precursors [13,16,17,20,21,30] Also, this resistivity value is one or two orders of magnitude lower than those of In 2 O 3 films deposited by vacuum deposition methods, such as sputtering [7,31], and CVD [32]. The carrier concentration of the In 2 O 3 film in the present work is approximately 1.2  10 21 cm À 3 and the electron Hall mobility is about 13.1 cm 2 /Vs.…”

“…In 2 O 3 films can be grown using a variety of methods such as pulsed laser deposition (PLD) [6], sputtering [7,8], chemical vapor deposition (CVD) [9,10], and atomic layer deposition (ALD) [11,12]. State of the art displays are anticipated to require large area uniformity and low temperature processes, especially for the fabrication of mechanically flexible displays on polymer substrates.…”

“…The use of InCl 3 precursor required excessively high deposition temperatures ($ 500 1C), resulting in low growth rate (o0.3 Å/cycle) [15,16]. Also, In(acac) 3 [17] and Trimethyl In [18,19] precursors resulted in low growth rates (o0.4 Å/cycle) and high resistivity (3 Â 10 À 2 Ω cm) films. When InCp is used as the precursor, relatively high growth rates may be achieved (1.3 Å/cycle) [20][21][22], however strong oxidants such as ozone are needed in order to obtain oxide films, otherwise H 2 O and O 2 must be injected simultaneously to stimulate the precursor oxidation.…”

Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

“…However, most of the reported studies were based on solid In precursors, which exhibit relatively low vapor pressure and reproducibility although some of them readily volatilize with mild heating. [15][16][17] In addition, precursors such as InCl 3 , indium acetylacetonate [In(acac) 3 ] 15 and trimethylindium (TMIn) require relatively high deposition temperatures and result in slow ALD growth rates 18,19 and high electrical resistivity (>10 -3 Ω·cm). 17,20,21 The use of cyclopentadienylindium (InCp) precursor resulted in relatively fast ALD growth (1.3 Å/cycle), but the deposition temperatures were still relatively high (200~300 °C) [22][23][24] .…”

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

“…[In(acac) 3 ] was the precursor in the ALD of In 2 O 3 films on Si(1 0 0), fused silica or soda lime glass substrates, using as reactive gas either 15 vol % O 3 at 165-225 ∘ C or water vapor at 165-200 ∘ C (pressure 2 mbar). The films were acceptably smooth and optically transparent, and, in the case of O 3 , showed electrical resistivity between 0.03 and 0.07 Ω cm 58 .…”