Thin films of n-type SnSe2 produced from chemically deposited p-type SnSe

Barrios‐Salgado, Enue; Nair, M. T. S.; Nair, P. K.

doi:10.1016/j.tsf.2015.11.075

Cited by 31 publications

(21 citation statements)

References 24 publications

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“…All of the current–voltage ( I - V ) characteristics were measured using a semiconductor parameter analyzer (HP 4155C, Agilent Technologies, USA) on an electrically shielded probe station at room temperature. Figure 4a shows the drain current ( I d ) as a function of the gate voltage ( V g ), for the 90-nm-thick SnSe nanoflake, for the source-drain voltages ( V ds ) of −30, 0, and 30 V, at room temperature, indicating a clear p-type semiconductor behavior, which is mainly attributed to the Sn vacancies, as reported previously [ 15 , 16 , 22 , 24 , 35 – 39 ]. The result in Fig.…”

Section: Resultssupporting

confidence: 69%

Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

Cho

Park

et al. 2017

Nanoscale Res Lett

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We report p-type tin monoselenide (SnSe) single crystals, grown in double-sealed quartz ampoules using a modified Bridgman technique at 920 °C. X-ray powder diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) measurements clearly confirm that the grown SnSe consists of single-crystal SnSe. Electrical transport of multi-layer SnSe nanoflakes, which were prepared by exfoliation from bulk single crystals, was conducted using back-gated field-effect transistor (FET) structures with Au and Ti contacts on SiO2/Si substrates, revealing that multi-layer SnSe nanoflakes exhibit p-type semiconductor characteristics owing to the Sn vacancies on the surfaces of SnSe nanoflakes. In addition, a strong carrier screening effect was observed in 70−90-nm-thick SnSe nanoflake FETs. Furthermore, the effect of the metal contacts to multi-layer SnSe nanoflake-based FETs is also discussed with two different metals, such as Ti/Au and Au contacts.

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Section: Resultssupporting

confidence: 69%

Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

Cho

Park

et al. 2017

Nanoscale Res Lett

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“…SnSe 2 is n-type semiconductor with carrier concentration between 10 17 -10 19 cm −3 [71]. The band gap varies between 0.9-2.04 eV [70][71][72][73][74], absorption coefficient of >10 4 cm −1 , and mobility between 0.6-85 cm 2 /Vs [3,71,72,[75][76][77][78][79][80]. The highest mobility of 85 cm 2 /Vs was extracted from an exfoliated SnSe 2 field effect transistor [80].…”

Section: Performance Of Photodetectors Based On Snsementioning

confidence: 99%

Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

et al. 2020

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While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.

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“…Проведенное уточнение параметров кристаллической решетки SnSe с использованием программного продукта FullProf показало значение a = (11.481 ± 0.005) ¦ , b = (4.155 ± 0.005) ¦ , c = (4.437 ± 0.005) ¦ , которые хорошо согласуются с литературными данными [12,39,40].…”

Section: результаты и обсуждениеunclassified

“…Свежеосажденные тонкопленочные слои селенида олова (II) обладают характерным для изучаемого полупроводникового соединения выраженным p-типом про-водимости, установленным методом термоэдс, что согласуется с данными публикаций [39,40].…”

Section: результаты и обсуждениеunclassified

Состав, структура, полупроводниковые свойства химически осажденных пленок SnSe

Маскаева¹,

Федорова²,

Марков³

et al. 2019

Физика И Техника Полупроводников

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High adhesion tin monoselenide SnSe layers with a thickness of up to 200 ± 10 nm have been prepared by hydrochemical deposition from a trilonate reaction mixture. It was revealed by the X-ray diffraction method that the synthesized films crystallize in the orthorhombic system (S. G. Pnma). The presence of a significant amount of oxygen in the surface layers of the films is explained by partial oxidation of the samples with the formation of the SnO2 phase. The results of ion etching to a depth of 18 nm showed a sharp decrease in the oxygen content with depth and actual correspondence of the elemental composition to SnSe. According to the results of optical studies, the band gap was found to be 1.69 eV for direct type of transitions, respectively. The synthesized SnSe layers have a hole-type conductivity typical of this material.

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Thin films of n-type SnSe2 produced from chemically deposited p-type SnSe

Cited by 31 publications

References 24 publications

Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

Состав, структура, полупроводниковые свойства химически осажденных пленок SnSe

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