Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates

Abstract

Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant J. Vac. Sci. Technol. Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

“…Despite the thick buffer, transport in the InAs/GaSb quantum well channels still suffers from high dislocation density and quantum well-barrier interface roughness of the same order as the quantum well width (as evidenced by surface roughness). Typically, surface roughness of the InAs/GaSb system on GaAs substrates is a few Angstroms 21,22 up to above 1nm 23 , which is greater than 10% of the widths of the quantum wells (e.g. 50 Å for GaSb and 125 Å for InAs in typical double quantum well structure).…”