Thin organic bottom antireflective coatings for 193 nm lithography

Bhave, Mandar; Meador, James D.; Claypool, James B.; Deshpande, Shreeram V.; Akers, Jill; Lindgren, Anne

doi:10.1117/12.474183

Cited by 4 publications

(1 citation statement)

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“…Another application for compositions containing amino-formaldehyde oligomers is the preparation of anti-reflective coatings for the 193 nm photolithography [18][19][20]. It is noteworthy that all these articles listed above cover no curing process aspects as well.…”

Section: Introductionmentioning

confidence: 99%

Curing of Poly(styrene-co-methyl methacrylate-co-2-hydroxyethyl methacrylate) Terpolymers in the Presence of Amino Compounds of Different Structures

Pugacheva,

Kurbatov,

Vaganov

et al. 2023

Polymers

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The process of curing the acrylic oligomers for rapid thermal curing coatings in the presence of hexa(methoxymethyl)melamine (HMMM), tetra(butoxymethyl)glycoluril (TBMG), and tetra(methoxymethyl)glycoluril (TMMG) has been studied. When HMMM is used as a hardener, the content of hydroxyl groups in the terpolymer and also the crosslinking agent concentration have little effect on the initial cure rate. It has been established that during the curing of the TMMG composition, the amount of the network polymer and the initial curing rate decrease at short curing times only. It has also been revealed that the use of butoxy groups instead of methoxy groups as blocking agents leads both to a decrease in the initial cure rate and the gel fraction limiting value from 98 to 80%. When it comes to TBMG-containing compositions, a decrease in the part of hydroxyl groups in the copolymer leads to a significant fall in the initial curing rate and also in the gel fraction content. Regardless of the crosslinking agent used, an acceleration of the curing process is observed with an increase in the catalyst content in the compositions.

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Section: Introductionmentioning

confidence: 99%

Curing of Poly(styrene-co-methyl methacrylate-co-2-hydroxyethyl methacrylate) Terpolymers in the Presence of Amino Compounds of Different Structures

Pugacheva,

Kurbatov,

Vaganov

et al. 2023

Polymers

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Synthesis of copolymer containing anthracene group and its application in bottom anti-reflective coatings for KrF photoresist

Xu,

Zhang,

Zheng

et al. 2025

Progress in Organic Coatings

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Novel Fast Etch Rate BARC for ArF Immersion Lithography

Lee

Ahn

Jang

et al. 2018

J. Photopol. Sci. Technol.

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Thickness of 193 immersion photoresist (PR) has been continuously reduced to achieve smaller critical dimension (CD) beyond 1x nm nodes. As a result, faster etch rate (E/R) bottom antireflective coating (BARC) is required to maintain appropriate PR thickness as a mask for pattern transfer and small CD bias after dry etch process of BARC. The etch rate of BARC can be theoretically predicted by Ohnishi Parameter (O.P.); faster etch rate can be obtained by high O.P. with increase in number of hydrophilic heteroatoms, such as nitrogen (N) or oxygen (O). However, poor solubility of high polar resin is the major technical barrier in development of faster E/R BARC. We have designed novel polarity-switchable BARC (PS-BARC) with enhanced solubility via hydrophobic protecting groups while maintaining fast etch rate. In this paper, details of BARC new fast E/R immersion BARC for 193 nm lithography will be discussed.

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Thin organic bottom antireflective coatings for 193 nm lithography

Cited by 4 publications

References 0 publications

Curing of Poly(styrene-co-methyl methacrylate-co-2-hydroxyethyl methacrylate) Terpolymers in the Presence of Amino Compounds of Different Structures

Curing of Poly(styrene-co-methyl methacrylate-co-2-hydroxyethyl methacrylate) Terpolymers in the Presence of Amino Compounds of Different Structures

Synthesis of copolymer containing anthracene group and its application in bottom anti-reflective coatings for KrF photoresist

Novel Fast Etch Rate BARC for ArF Immersion Lithography

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