Thin single-crystal Sc2O3 films epitaxially grown on Si (111)—structure and electrical properties

Rare-earth oxide thin films for gate dielectrics in microelectronics

“…Dating back to 1980's, thermal evaporation of several gate oxides, such as Yb 2 O 3 , Er 2 O 3 , Pr 2 O 3 on II-VI materials as transistor channels was realized [48,54]. Since then, MBE, PLD and other techniques have been developed for silicon and III-V semiconductor based microelectronics [37,38,40,50]. The growth temperature range extends from the room temperature (RT) up to 900 • C (Table 1).…”

“…In a few cases, epitaxial films have been grown at temperatures 250-500 • C, such as Y 2 O 3 and Gd 2 O 3 by EBE on Si and GaAs [38], or CeO 2 by PLD at 550 • C on InP [45]. Sc 2 O 3 films had to be grown by EBE, PLD or MBE at elevated temperatures, 675-900 • C, in order to realize epitaxy on Si(1 1 1) [37]. On the other hand, in order to achieve the stoichiometric cubic Pr 2 O 3 phase, the films had to be grown by EBE, PLD or MBE at elevated temperatures, at 770 • C [26,52].…”

Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

“…In order to overcome the aforementioned problem, high dielectric constant (Ä) gate has been proposed as an alternative gate dielectric. Numerous high Ä materials (Ta 2 O 5 [7], Y 2 O 3 [8][9][10], La 2 O 3 [11], Nd 2 O 3 [12], Sc 2 O 3 [13], HfO 2 [14][15][16], and ZrO 2 [3,6,14,15,17]) have been extensively investigated and reported. Of these high Ä materials, ZrO 2 may be considered as a potential candidate for the near future generation technology nodes.…”

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

“…The use of high-k materials allows reduced leakage current densities for physically thicker films while maintaining the same capacitance per unit area of the gate oxide. In recent years, a wide range of highk materials, such as HfO 2 [2], ZrO 2 [3], A1 2 O 3 [4], Sc 2 O 3 [5], Y 2 O 3 [6], lanthanide oxide [7], etc., has been suggested as the candidates to replace SiO 2 or SiO x N y . However, most of them have low crystallization temperature and the relatively high oxygen diffusivity may result in a high gate leakage current and the growth of a lower permittivity interfacial layer.…”

“…are considered as a candidate material beyond the Hf-based materials due to their higher k values and thermodynamic stability on Si [7]. Moreover, some rare earth oxides, such as Sc 2 O 3 [5], Y 2 O 3 [6] and Pr 2 O 3 [12], are epitaxially grown on Si (1 1 1), which eliminates problems related to grain boundaries in polycrystalline films. Among rare earth oxides, La 2 O 3 is attractive due to its highest dielectric constant, but it is chemically unstable, as lanthanum hydroxide and carbonate are formed with exposure to ambient atmosphere [13], resulting in the unwanted flatband voltage shifts.…”