Thin SiO2 layers on Si(111) with ultralow atomic step density

Oliver, Antonio C.; Blakely, J. M.

doi:10.1116/1.1320804

Cited by 5 publications

(2 citation statements)

References 16 publications

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“…The largest step-free areas were terraces with a width of approximately 30 µm. Oliver et al [66] used AFM to investigate the change of morphology of stepped surfaces due to oxidation. They found that the oxidation of silicon, i.e.…”

Section: Monoatomic Silicon Steps For Calibration Of Microscopesmentioning

confidence: 99%

The lattice parameter of silicon: a secondary realisation of the metre

Yacoot

Bosse

Dixson

2020

Meas. Sci. Technol.

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The 2019 revision of the International System of Units (SI) linked the seven base units to fundamental constants; only a minor rewording was necessary for the metre whose definition was already linked to the speed of light. However, the largest change in the metre realisation since 1983 occurred with the adoption of the lattice parameter of silicon as a secondary realisation of the metre to support dimensional nanometrology. The traceability of the silicon lattice spacing has been established through combined optical and x-ray interferometry with a relative uncertainty of and three routes to traceability via the silicon lattice spacing have been formally recognised in the Mise en Pratique for the metre. These are length measurement using x-ray interferometry (relying on the known value for the lattice spacing rather than using x-ray interferometry to measure the lattice spacing) counting atoms on linewidth structures using transmission electron microscopy and using monoatomic steps to calibrate scanning probe microscopes. This paper describes these routes and highlights the opportunities this new secondary realisation presents.

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Section: Monoatomic Silicon Steps For Calibration Of Microscopesmentioning

confidence: 99%

The lattice parameter of silicon: a secondary realisation of the metre

Yacoot

Bosse

Dixson

2020

Meas. Sci. Technol.

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“…12. It has been shown that once a clean surface with atomic steps and terraces is formed, the pattern of atomic steps on a Si substrate is preserved at the SiO 2 /Si interface after oxide formation. [13][14][15][16][17] For example, Oliver and Blakely 17 observed both the atomic steps on the original Si͑111͒ substrate and surface of oxide of 7 nm by AFM and found that they coincide within ϳ30 nm. Based on the present results, we suggest that the surface morphology is stable against oxidation also for gate oxidation of RCA-treated substrates.…”

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confidence: 99%

Analysis of SiO2/Si(001) interface roughness for thin gate oxides by scanning tunneling microscopy

Gotoh

Sudoh

Itoh

et al. 2002

Applied Physics Letters

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We studied the interface roughnesses of SiO2/Si(001) for gate oxides of 8 and 15 nm thicknesses together with RCA-treated samples by using scanning tunneling microscopy (STM). By STM observation and scaling analysis we made clear that the interface roughnesses of thermal oxides/Si substrates were similar to each other and to that of the chemical oxide/Si substrate prior to thermal oxidation; the correlation length was 23–26 nm and the rms roughness at length scales larger than the correlation length was 0.28–0.29 nm. The results indicate that the interface roughnesses of the oxides are determined by the processes prior to the oxidations.

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Arrays of widely spaced atomic steps on Si(111) mesas due to sublimation

Chang

Blakely

2005

Surface Science

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Steps with spacings of microns form on top of mesas fabricated on Si(111) that is annealed at temperatures where sublimation becomes important. Upon annealing, mesas first develop ridges along their edges, effectively creating craters which then become step-free by a step flow process described in the literature. Due to the miscut of the average surface from (111), ridge breakdown occurs on one edge of each mesa as sublimation proceeds. The breakdown point then acts as a source of steps which spread out over the mesa surface. The distribution of steps in the resulting step train depends on the sublimation rate, direct step-step interaction and the diffusive exchange of atoms among the steps. Computer simulations using BCF (Burton, Cabrera and Frank) theory provide insight into the controlling processes. The results suggest that self-organization of the wide terrace distributions in the low step density area occurs under sublimation. We compare the experimental and predicted step distributions.Comment: 11 pages, 3 figures with 7 subfigures revised for submission to Surface Scienc

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Thin SiO2 layers on Si(111) with ultralow atomic step density

Cited by 5 publications

References 16 publications

The lattice parameter of silicon: a secondary realisation of the metre

The lattice parameter of silicon: a secondary realisation of the metre

Analysis of SiO2/Si(001) interface roughness for thin gate oxides by scanning tunneling microscopy

Arrays of widely spaced atomic steps on Si(111) mesas due to sublimation

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