We have studied the structural evolution of voids in the Si substrate and the formation of silicon-on-nothing ͑SON͒ structures upon spontaneous reshaping of square arrays of cylindrical holes on Si͑001͒ substrates by hydrogen annealing. Vertically elongated voids covered with ͕111͖, ͕100͖, ͕110͖, and ͕113͖ facets are initially formed by the closure of the hole inlets. This step is followed by volume preserving shape changes of the faceted voids in the bulk Si. In situations where the hole-hole separation is sufficiently small, void coalescence occurs due to the shape changes of individual voids, leading to the formation of a SON structure. Until void coalescence, the shapes of individual voids change without being affected by the adjacent voids. Numerical simulations of the shape change of a completely faceted void via solely surface diffusion have been performed and have reproduced the observed shape change.

¡n this paper, the effect ofswface damage induced by focused ion beam (FIB) fabrication on the mechanical properties of silicon (Si) nanowires (NWs) was investigated. Uniaxial tensile testing of the NWs was performed using a reusable on-chip tensile test device with 1000 pairs of comb structures working as an electrostatic force actuator, a capacitive displacement sensor, and a force sensor. Si NWs were made from silicon-on-nothing (SON) membranes that were produced by deep reactive ion etching hole fabrication and ultrahigh vacuum annealing. Micro probe manipulation and film deposition functions in a FIB system were used to bond SON membranes to the device's sample stage and then to directly fabricate Si NWs on the device. All the NWs showed brittle fracture in ambient air. The Young's modulus of 57nm-wide NW was 107.4 GPa, which was increased to 144.2 GPa with increasing the width to 221 nm. The fracture strength ranged from 3.9 GPa to 7.3 GPa. By assuming the thickness of FIB-induced damage layer, the Young's modulus of the layer was estimated to be 96.2 GPa, which was in good agreement with the literature value for amorphous Si.

The measurement of pitch in metrology instruments is thought to be a benign self-compensating function. In the course of issuing the new scanning electron microscope standard SRM 2090, a new algorithm for the measurement of pitch was developed. This is based on linear regression models. For a pitch measurement, a regression line is traditionally fitted to each edge of the data independently, then the distance between some arbitrary threshold on that line is determined. The new algorithm eliminates the need for a threshold. An evaluation of uncertainty of the measurement process is also described.

Shape transformation of silicon trenches during annealing at high temperatures in a hydrogen ambient was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). By SEM observation of the trench profiles, we found that the rate of shape transformation increases with decreasing hydrogen pressure. Performing the simulation based on a continuum surface model, we show that the shape transformation during annealing in a hydrogen ambient is due to surface self-diffusion. By quantitative comparison of the results between the experiment and simulation, we estimated the diffusion coefficients. The obtained activation energy for surface diffusion under a hydrogen pressure of 40 Torr was much higher than that measured under ultrahigh-vacuum conditions. Furthermore, it was found by AFM observation of the trench sidewall surfaces that, during the thermal treatment, the large roughness of the as-etched trench sidewall surface decreased significantly due to surface self-diffusion of silicon atoms, resulting structures with atomically flat terraces and steps.

The photoinduced topochemical reaction of the diacetylene (DA) compound 10,12-pentacosadiyn-1-ol in the two-dimensional (2D) crystal phase adsorbed on graphite was examined by scanning tunneling microscopy (STM). The reaction efficiency and the structure of the generated polydiacetylene depend on its polymorphic forms, i.e., the "herringbone" or the "parallel" monomer arrangements. The reaction efficiency of the herringbone arrangement is lower than that of the parallel arrangement because the distance R between the probable reactant acetylenic carbon atoms of the herringbone arrangement is longer than that of the parallel arrangement. However, the fact that polydiacetylenes form from the herringbone arrangement (R = 0.58 nm) is contrary to the geometric criteria for the polymerization of three-dimensional (3D) crystals (the reaction was only observed if R < 0.4 nm). The polymerization criterion for the 2D phase differs from that of the 3D phase. In addition, the STM cross-section profiles of the polydiacetylenes reveal that the "lifted-up" and "in-plane" conformations form from the parallel and herringbone arrangements, respectively.