Third Order Intermodulation Improvement in Distributed Amplifiers

Aitchison, C.S.; Mbabele, M.

doi:10.1109/euma.2001.339118

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…The transistors utilized in the PA produce non-linearity due to the non-linear current and non-linear capacitance that rely on the device voltages [ 37 , 38 ]. The main non-linear elements that effect the PA’s performance are the transconductance ( g m ), drain-source capacitance ( C ds ), and gate-source capacitance ( C gs ) [ 39 ]. The Taylor series expansion can be used in order to determine the polynomial transfer function of non-linearity.…”

Section: Performance Metrics Of Cmos Power Amplifiermentioning

confidence: 99%

A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems

et al. 2023

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Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a growing need for enhancements and upgrades to the current wireless communication systems. CMOS transceivers are increasingly being explored to meet the requirements of the latest wireless communication protocols and applications while achieving the goal of system-on-chip (SoC). The radio frequency power amplifier (RFPA) in a CMOS transmitter plays a crucial role in amplifying RF signals and transmitting them from the antenna. This state-of-the-art review paper presents a concise discussion of the performance metrics that are important for designing a CMOS PA, followed by an overview of the trending research on CMOS PA techniques that focuses on efficiency, linearity, and bandwidth enhancement.

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Section: Performance Metrics Of Cmos Power Amplifiermentioning

confidence: 99%

A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems

et al. 2023

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“…It was proved in [9] that the ratio between the output power at the fundamental frequency (carrier) and the third-order intermodulation (IM3) power is drastically improved in multistage distributed amplifiers as compared to nondistributed multistage amplifiers. It was proved in [9] that the ratio between the output power at the fundamental frequency (carrier) and the third-order intermodulation (IM3) power is drastically improved in multistage distributed amplifiers as compared to nondistributed multistage amplifiers.…”

Section: Principle and Analysis Of Distributed Amplifiersmentioning

confidence: 99%

“…This propagation constant is not the propagation constant (per unit length) typically used for transmission lines 9. In fact, this condition needs to be satisfied; otherwise, the output signals of a gain cell and its subsequent one cannot be constructively added.…”

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confidence: 99%

Amplifiers

2015

Radio‐Frequency Integrated‐Circuit Engineering

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AMPLIFIERSAmplifiers are one of the most important active components in radio frequency integrated circuits (RFICs) and used virtually in all RFIC systems. Amplifiers are, in principle, categorized into two classes: low noise amplifiers (LNAs) and power amplifiers (PAs). While LNAs are used practically in all receiver subsystems, PAs are used in most transmitters. Depending on applications, an amplifier may operate over a narrow or wide bandwidth. Broadband amplifiers require special design techniques and/or circuit topologies to achieve certain gain, noise figure, linearity, and radio frequency (RF) power, depending on their use as LNA or PA, over the desired bandwidths. This chapter presents the fundamentals and design of RF amplifiers, LNA, PA, balanced amplifiers, and broadband amplifiers. FUNDAMENTALS OF AMPLIFIER DESIGNRF amplifiers are covered in many papers and several books -for example, Reference [1] which is one of the excellent references that provides details of several topics in RF amplifiers. The design of amplifiers can be classified into five categories: design for certain or maximum gain, design for minimum noise figure, design for both gain and noise figure, design for maximum RF power handling, and design for broadband operation. The broadband design category may be considered as part of the other four design categories. Power GainA typical block diagram of general and simple RF amplifiers is shown in Figure 11.1, which consists of an input matching network (IMN), a transistor, and an output matching network (OMN). For the sake of illustration, we use metal oxide semiconductor field effect transistor (MOSFET) for the transistor. Γ S(L) and Z S(L) represent the reflection coefficient and input impedance looking into the input (output) matching network, respectively. Γ in(out) and Z in(out) represent the reflection coefficient and input impedance looking into the input (output) of the MOSFET, respectively. S ij (i, j = 1, 2) stand for the S-parameters of the active device.Radio-Frequency Integrated-Circuit Engineering, First Edition. Cam Nguyen.

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