Three-dimensional 4F&lt;sup&gt;2&lt;/sup&gt; ReRAM cell with CMOS logic compatible process

Wang, Ching-Hua; Tsai, Yi-Hung; Lin, Kai-Chun; Chang, Meng‐Fan; King, Ya‐Chin; Lin, Chao-An; Sheu, Shyh-Shyuan; Chen, Yu‐Sheng; Lee, Heng-Yuan; Chen, Frederick T.; Tsai, Ming-Jinn

doi:10.1109/iedm.2010.5703446

Cited by 29 publications

(9 citation statements)

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“…1(d)]. The cell size (S) was scaled down to S ¼ 20 Â 20 nm 2 Current-Voltage (I-V) characteristics are obtained using a conventional parameter analyzer. Forming characteristics are investigated on 1R cells (no select transistor), by applying voltage ramps to the TE while the BE is grounded.…”

Section: Methodsmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] Typical cells consist of an oxide layer sandwiched between metal electrodes, and the operation is based on the reversible change between distinct resistance states induced by electrical current/voltage. The cell generally requires initially a forming process to generate a conductive filament (CF) through the insulating layer, after which the cell may be reversibly reset-switched to a high-resistance state (HRS) and set-switched to a low-resistance state (LRS).…”

Section: Introductionmentioning

confidence: 99%

“…Excellent switching has been reported for TiN\HfO 2 \Ti stacks, whereby the Ti electrode is used as an oxygen-(O-) scavenging element, i.e., generating oxygen-vacancy (V o ) defects in the HfO 2 layer. 2 We recently demonstrated excellent functionality and reliability of scaled HfO 2 -based cells using Hf as scavenging electrode. 1,6,7 For NAND Flash replacement, a key challenge for RRAM is to operate at low current (<10 lA).…”

Section: Introductionmentioning

confidence: 99%

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On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

Goux

Raghavan

Fantini

et al. 2014

Journal of Applied Physics

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In this article, we investigate extensively the bipolar-switching properties of Al2O3- and HfO2-based resistive-switching memory cells operated at low current down to <1 μA. We show that the switching characteristics differ considerably from those typically reported for larger current range (>15 μA), which we relate as intrinsic to soft-breakdown (SBD) regime. We evidence a larger impact of the used switching-oxide in this current range, due to lower density of oxygen-vacancy (Vo) defects in the SBD regime. In this respect, deep resetting and large memory window may be achieved using the stoichiometric Al2O3 material due to efficient Vo annihilation, although no complete erasure of the conductive-filament (CF) is obtained. We finally emphasize that the conduction may be described by a quantum point-contact (QPC) model down to very low current level where only a few Vo defects compose the QPC constriction. The large switching variability inherent to this latter aspect is mitigated by CF shape tuning through adequate engineering of an Al2O3\HfO2 bilayer.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

Goux

Raghavan

Fantini

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6] Typical cells consist of an oxide layer sandwiched between metal electrodes. After a so-called forming process generally required to create a conductive filament (CF) through the oxide, the cell may be reversibly reset-switched to a high-resistance state (HRS) and set-switched to a low-resistance state (LRS).…”

Section: Introductionmentioning

confidence: 99%

“…6,7 Based on this guideline, excellent switching control has been reported in HfO 2 -based cells using either Ti or Hf scavenging metals. 1,2,7 Recently, promising switching and reliability properties have also been demonstrated in Ta 2 O 5 -based cells. [3][4][5] In this article, we use a TiN\Ta 2 O 5 \Ta stack where the Ta layer plays the role of scavenging electrode.…”

Section: Introductionmentioning

confidence: 99%

H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Goux

Kim

Magyari-Köpe

et al. 2015

Journal of Applied Physics

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In this article, we evidence the lower formation energy and improved stability of the conductive filament (CF) formed in TiN\Ta 2 O 5 \Ta resistive-switching memory cells treated in NH 3 atmosphere at 400 C. This annealing treatment results in (i) lower forming voltage, (ii) lower CF resistance, and (iii) longer retention lifetime of the oxygen-vacancy (V o ) chain constituting the CF. Atomistic insights into these processes are provided by ab initio calculations performed for hydrogen (H) species incorporated in non-stoichiometric Ta 2 O 5 supercells: (i) V o formation energy is reduced by the presence of H, (ii) V o -chain CF conductivity is increased by V o þ OH complex formation, and (iii) V o -chain retention is strengthened by the stable V o þ OH complex. As a result, efficient CF formation and excellent state stability are obtained after 15 days at 250 C. V C 2015 AIP Publishing LLC.

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Disrupting Low-Write-Energy vs. Fast-Read Dilemma in RRAM to Enable L1 Instruction Cache

Lele

Jandhyala

Gangurde

et al. 2022

Communications in Computer and Information Science

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Three-dimensional 4F<sup>2</sup> ReRAM cell with CMOS logic compatible process

Cited by 29 publications

References 0 publications

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Disrupting Low-Write-Energy vs. Fast-Read Dilemma in RRAM to Enable L1 Instruction Cache

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