Three dimensional devices fabricated by silicon epitaxial lateral overgrowth

Neudeck, G.W.; Suchubert, P. J.; Glenn, J. L.; Friеdrich, J.; Klaasen, W.A.; Zingg, R.P.

doi:10.1007/bf02651990

Cited by 23 publications

(8 citation statements)

References 18 publications

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“…ELO technique is used mainly to reduce defect density in lattice mismatched heteroepitaxial systems (see [3] for a review). However, homoepitaxial version the ELO technique also finds its practical application in production of silicon-on-insulator structures [4], MOS transistors [5], field effect transistors [6], solar cells [7], pressure sensors [8] and for three-dimensional device integration [9]. Usually, dielectric films (SiO 2 , Si 3 N 4 , etc.)…”

Section: Introductionmentioning

confidence: 99%

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs

Dobosz

Żytkiewicz²,

Piotrowski

et al. 2003

Cryst. Res. Technol.

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Liquid phase epitaxial lateral overgrowth of GaAs layers on GaAs substrates masked by tungsten films was studied. We show that at our growth conditions perfect growth selectivity was obtained, so the layers started growing from the openings cut in the mask only. However, serious damage of the mask during epitaxial growth was observed. As this deteriorates crystallographic quality of the layers a procedure was elaborated to eliminate degradation of the tungsten film by the melt. In particular, reduction of growth temperature and deposition of Au/Zn wetting layers between tungsten film and the GaAs substrate were found important to avoid degradation of the mask and for successful lateral growth of the layers. Tungsten masked GaAs substrates were then used for lateral overgrowth of GaAs by liquid phase electroepitaxy. Preliminary results are presented showing that application of electrically conductive tungsten mask, which allows a direct DC current flow from the melt to the substrate, results in much wider and thinner electroepitaxial layers than those grown on the substrates coated by insulating film.

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Section: Introductionmentioning

confidence: 99%

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs

Dobosz

Żytkiewicz²,

Piotrowski

et al. 2003

Cryst. Res. Technol.

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“…1 Furthermore, methods to form multiple-layer SOI have also been developed and devices have been stacked into multiple layers to fabricate three-dimensional integrated circuits. 2,3 Extensive research has been conducted on SOI isolation technologies. Recent research has shown that SOI device isolation process has a profound impact upon both the device mobility and number of crystal defects in the SOI film.…”

Section: Unique Methods To Electrically Characterize a Single Stackingmentioning

confidence: 99%

Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Yang

Neudeck

Denton

2000

Applied Physics Letters

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Articles you may be interested inModeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxidesemiconductor field effect transistors: Implications for device reliability Strain and electrical characterization of metal-oxide-semiconductor field-effect transistor fabricated on mechanically and thermally transferred silicon on insulator filmsComparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxidesemiconductor field effect transistors Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors

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“…Selective epitaxial growth ͑SEG͒, epitaxial lateral overgrowth ͑ELO͒, and confined lateral selective epitaxial growth ͑CLSEG͒ have been demonstrated to be useful for a variety of devices and three-dimensional applications in complementary metal-oxide-semiconductors ͑CMOS͒, bipolar and biCMOS devices. [1][2][3][4] More recently, selective growth has been used for epitaxial base for bipolar junction transistors, [5][6][7] epitaxial channel in metal-oxidesemiconductor field effect transistors ͑MOSFETs͒, [8][9][10] and device regions for advanced isolation. 11 Figure 1 shows the various selective growth techniques and how they can be applied to device fabrication.…”

Section: Backgroundõmotivationmentioning

confidence: 99%

Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration

Bashir¹,

Su²,

Sherman³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Defects in the near sidewall region in selective epitaxial growth of silicon have prevented its widespread use as a viable dielectric isolation technology. The main cause of these defects has been demonstrated to be thermal stress due to mismatch in the coefficient of thermal expansion between silicon and silicon dioxide. This article presents the detailed electrical characterization of these sidewall defects using P+/N junction diodes fabricated using silicon dioxide and thermally nitrided silicon dioxide as the field insulator. It is shown that the use of field oxide which was nitrided at 1100 °C for 60 min in ammonia gas ambient reduced the reverse saturation current density in the diodes by a factor of 6 and also improved the forward recombination and ideality factors when compared to standard thermal field oxide isolated diodes. The improvement of the sidewall quality was attributed to a reduction in thermal stress due to the modification of the coefficient of thermal expansion of nitrided silicon oxide.

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Three dimensional devices fabricated by silicon epitaxial lateral overgrowth

Cited by 23 publications

References 18 publications

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs

Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration

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