2008
DOI: 10.1109/ted.2008.924068
|View full text |Cite
|
Sign up to set email alerts
|

Three-Dimensional Packaging Technology for Stacked DRAM With 3-Gb/s Data Transfer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
32
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
4
3
1

Relationship

0
8

Authors

Journals

citations
Cited by 74 publications
(32 citation statements)
references
References 12 publications
0
32
0
Order By: Relevance
“…Polysilicon is typically used as the filling material due to its ability to withstand high temperatures [12,13,17,19]. Via-first TSVs are less sensitive to contamination since both the filling and substrate materials are the same [18]. The physical dimensions of via-first TSVs are smaller than via-last TSVs [21].…”
Section: Via-first Tsvmentioning
confidence: 99%
See 2 more Smart Citations
“…Polysilicon is typically used as the filling material due to its ability to withstand high temperatures [12,13,17,19]. Via-first TSVs are less sensitive to contamination since both the filling and substrate materials are the same [18]. The physical dimensions of via-first TSVs are smaller than via-last TSVs [21].…”
Section: Via-first Tsvmentioning
confidence: 99%
“…The physical dimensions of via-first TSVs are smaller than via-last TSVs [21]. Via-first TSVs, however, are highly resistive and have a lower filling efficiency due to the use of polysilicon as the filling material [18].…”
Section: Via-first Tsvmentioning
confidence: 99%
See 1 more Smart Citation
“…The TSVs presented in Refs. [9,10] are fabricated with the "via-first" method and have diameters between 12 m to 18 m and the length of 30 m to 50 m where the first one is a poly silicon TSV with a resistance of 1.3 to 5 and the second is a metal TSV with a resistance of 230 m .…”
Section: Manufacturing Process For Tsvs and Inductive Linksmentioning
confidence: 99%
“…For example, 3D stacked memory may include coupled layers or packages of DRAM memory elements. A number of semiconductor companies have announced 3D stacked memory products [3], [8]. TSV technology shows a blueprint in the semiconductor business to overcome the technology scaling limitation and continue Moore's Law [1], [3].…”
Section: Introductionmentioning
confidence: 99%