2008
DOI: 10.1155/2008/892721
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Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses

Abstract: We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded… Show more

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Cited by 12 publications
(8 citation statements)
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“…However, the SLE of crystals faces other problems: it is very hard to avoid cracks. Cracks are caused by modified crystalline material becoming amorphous and creating great volume tensions which lead to the crack of material [ 150 ]. Moreover, high selectivity comes from very low etching rates of unmodified material.…”
Section: Fabrication Of Functional 3d Structuresmentioning
confidence: 99%
“…However, the SLE of crystals faces other problems: it is very hard to avoid cracks. Cracks are caused by modified crystalline material becoming amorphous and creating great volume tensions which lead to the crack of material [ 150 ]. Moreover, high selectivity comes from very low etching rates of unmodified material.…”
Section: Fabrication Of Functional 3d Structuresmentioning
confidence: 99%
“…Recently, the ultrashort laser ablation of sapphire has been attracting much attention because ultrashort laser ablation can produce precise, well-defined micrometer-sized structures in materials that cannot be processed with nanosecond pulsed lasers. A number of studies on the ultrashort laser ablation of sapphire have been carried out [3][4][5][7][8][9], and a mechanism for the ultrashort laser ablation of sapphire has been proposed [4,5,7,[9][10][11]. In ultrashort laser ablation of sapphire, two ablation phases were observed.…”
Section: Introductionmentioning
confidence: 99%
“…This publication suggest inscribing nanogratings inside the sapphire volume and etching it with KOH. A similar procedure was demonstrated with HF acid [31]. The etching selectivity values of around 10000 [32] obtained.…”
Section: Introductionmentioning
confidence: 56%