Three dimensional simulated modelling of diffusion capacitance of polycrystalline bifacial silicon solar cell

Mbodji, Senghane; Dieng, Moustapha; Mbow, B.; Barro, F.I.; Sissoko, G.

doi:10.4314/jast.v15i1-2.54834

Cited by 11 publications

(11 citation statements)

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“… the open circuit transient diffusion capacitance is very brief. It can be seen here that there is a difference between the considered model and that of the cubic grains where the range of operating points of the open circuits is sufficiently long [4].  the short circuit operating points zone is very important and there, the transient diffusion capacitance stretches toward zero ;  a transient diffusion capacitance, depending on operating point which is related to SF, appears between the open circuit operating to the shortcircuit operating points.…”

Section: Resultsmentioning

confidence: 94%

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A method to determine the transient capacitance of the bifacial solar cell considering the cylindrica grain and the dynamic junction velocity (Sf)

Leye¹,

Diouf²,

Mbodji³

et al. 2017

EAI Endorsed Transactions on Collaborative Computing

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ansactions A method to determine the transient capacitance of the bifacial solar cell considering the cylindrica grain and the dynamic junction velocity (Sf) AbstractIn this paper, we present a new technic based on t transient diffusion capacitance of the bifacial solar cell back surface recombination velocity (Sb) and the grain boundary recombination velocity (Sgb), we resolved the continuity equation in the base of the solar cell under monochro diffusion capacitance profile which decreases with the dynamic junction velocity (Sf), the back surface recombination velocity (Sb), the grain boundary recombination velocity (Sgb) and the high wave transient diffusion capacitance increases with the grains size (R).Keywords: Grain Size, Grain Boundary Recombination Velocity, Polycrystalline, Solar Cell, Junction Recombination Velocity, Wavelength, Capacitance. IntroductionThe choice of a model constitutes the basis of any modeling study leading to simulations and therefore to the results which enable to the physicist to make his scientific reading. For the characterization of solar cells, the one dimension (1D) [1,2] In this paper, we present a new technic based on the dynamic junction velocity (Sf) concept for the evaluation of the transient diffusion capacitance of the bifacial solar cell considering cylindrical model of the grains. Associating (Sf), the back surface recombination velocity (Sb) and the grain boundary recombination velocity (Sgb), we resolved the continuity f the solar cell under monochromatic illumination. We calculated and plotted the solar cell's transient diffusion capacitance profile which decreases with the dynamic junction velocity (Sf), the back surface recombination velocity (Sb), the grain boundary recombination velocity (Sgb) and the high wavelength. The study shows also that the transient diffusion capacitance increases with the grains size (R). The choice of a model constitutes the basis of any modeling study leading to simulations and therefore to the results which enable to the physicist to make his scientific reading. For the characterization of solar cells, the one dimension he columnar grains [3-4-5] models are widely used. Hence, combined to the dynamic junction velocity (SF), some methods are proposed to determine the diffusion length and the lifetime of the excess minority carriers in the base of the solar cell [6]. These permit also to calculate the excess minority carriers density, the photocurrent I [5], the photot cell's power (P), the I-V and P intrinsic junction recombination velocity (Sf0) [1,2] [1,2], the series and shunt resistances [5] and the diffusion capacitance solar cell's efficiency. Considering these two dimensions, effects of magnetic and electric fields and the irradiation on the electrical solar cell parameters are also studied [7,8]. In [3], authors used the columnar grains model and concluded that the solar cell's junction could be considered as a plane capacitor with two identical plane electrodes separated by an extension region width which de the dynamic...

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Section: Resultsmentioning

confidence: 94%

“…This second junction is the seat of the very intense electric field which returns the minority carriers towards the base [3][4][5]. This recombination at the back side of this type of solar cell which are more efficient than the conventional solar cell [3 5].…”

Section: Theorymentioning

confidence: 99%

A method to determine the transient capacitance of the bifacial solar cell considering the cylindrica grain and the dynamic junction velocity (Sf)

Leye¹,

Diouf²,

Mbodji³

et al. 2017

EAI Endorsed Transactions on Collaborative Computing

View full text Add to dashboard Cite

show abstract

“…Sf was called junction recombination velocity in our previous papers [22]. Sb is the back surface recombination velocity which traduces excess minority carriers lost at rear side of the solar cell [1]- [3] [8]- [10] [16] [17].…”

Section: Theorymentioning

confidence: 99%

“…Solar cells have seen remarkable improvements despite of some internal and external factors affecting their efficiency. Among internal factors, we can cite the grain boundary recombination velocity (Sgb) [1]- [3] [17], the intrinsic junction recombination velocity (Sf 0 ) [1]- [3] [8]- [10] [15] [17] related to the shunt resistance (Rsh) [2]- [18] due to losses at the junction, the series resistance (Rs) [2] [16] [18], and the back side recombination velocity (Sb) which quantifies the rate at which excess carriers are lost at the back surface of the solar cells [1]- [3] [8]- [10] [16] [17].…”

mentioning

confidence: 99%

Modelling Study of Magnetic Field’s Effects on Solar Cell’s Transient Decay

Mbodji¹,

Zoungrana²,

Zerbo³

et al. 2015

WJCMP

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Experimental setup of transient decay which occurs between two steady state operating points is recalled. The continuity equation is resolved using both the junction dynamic velocity (Sf) and back side recombination velocity (Sb). The transient excess minority carriers density appears as the sum of infinite terms. Influence of magnetic field on the transient excess minority carriers density and transient photo voltage is studied and it is demonstrated that the use of this techniqueis valid only when the magnetic field is lower than 0.001 T.

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“…Equation (4) uses the concept of junction recombination velocity Sf that describes how the minority carrier flow through the junction [5,7,9]. Sf can be written as [5,7,9]:…”

Section: Excess Minority Carrier Densitymentioning

confidence: 99%

Wavelength’s Effects on Recombination Velocities and on Diffusion Capacitance Efficiency

Dia¹,

Dieng²,

Mbodj³

et al. 2018

IJRET

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Three dimensional simulated modelling of diffusion capacitance of polycrystalline bifacial silicon solar cell

Cited by 11 publications

References 0 publications

A method to determine the transient capacitance of the bifacial solar cell considering the cylindrica grain and the dynamic junction velocity (Sf)

A method to determine the transient capacitance of the bifacial solar cell considering the cylindrica grain and the dynamic junction velocity (Sf)

Modelling Study of Magnetic Field’s Effects on Solar Cell’s Transient Decay

Wavelength’s Effects on Recombination Velocities and on Diffusion Capacitance Efficiency

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