Three-Dimensional Simulation of Vertical-Cavity Surface-Emitting Semiconductor Lasers

Osiński, Marek; Nakwaski, W.

doi:10.1007/978-3-662-05263-1_5

Cited by 16 publications

(16 citation statements)

References 150 publications

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“…[8][9][10][11]. General rules of the advanced modeling of VCSEL operation were also formulated by Osiński and Nakwaski [12]. Electrical conductivities of semiconductor layers depend on their doping and free carrier concentration [13].…”

Section: Theoretical Modelmentioning

confidence: 99%

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

et al. 2013

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In the present paper, a comprehensive computer simulation is used to determine optimal structure of the InPbased GaInNAs quantum-well (QW) active region and to investigate a possibility of reaching room-temperature (RT) continuous-wave (CW) single-fundamental-mode 2.33-µm operation of vertical-cavity surface-emitting laser (VCSEL) with such an active region. From among various considered InP-based active regions, the one with the Ga 0.15 In 0.85 N 0.015 As 0.985 /Al 0.138 Ga 0.332 In 0.530 As QW, i.e. with barriers lattice matched to InP, seems to be optimal for the 2.33-µm VCSEL performance. Its QW material is chosen for the required long-wavelength emission whereas its barrier is expected to ensure promising laser performance at room and higher temperatures. The latter is mostly connected with the QW conduction band offset equal in the above active region to as much as 413 meV, which is much larger than those of its possible lattice matched to InP competitors, e.g. 276 meV for the Ga 0.47 In 0.53 As barrier and 346 meV for the Ga 0.327 In 0.673 As 0.71 P 0.29 one. Our simulation reveals that from among various considered structures, a VC-SEL with a 4-µm-diameter tunnel junction and two 6-nm Ga 0.15 In 0.85 N 0.015 As 0.985 /Al 0.138 Ga 0.332 In 0.530 As QWs exhibits the lowest calculated threshold current of 0.88 mA. Its promising RT CW performance suggests that it may represent a very interesting alternative to GaSb-based VCSELs.

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Section: Theoretical Modelmentioning

confidence: 99%

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

et al. 2013

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“…Other known VCSEL models may be found in [21], where their properties have been analysed and compared. Some of them have been claimed to be very exact, starting from the so-called first principles.…”

Section: The Modelmentioning

confidence: 99%

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

Sarzała

Piskorski

2010

Appl. Phys. A

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The comprehensive optical-electrical-thermalrecombination self-consistent VCSEL model is used to compare the performance of oxide-confined (OC) and protonimplanted (PI) VCSELs and to optimise their structures. Generally index-guided (IG) OC VCSELs demonstrate lower lasing thresholds whereas both gain-guided (GG) OC and PI ones manifest much better mode selectivity. Therefore, their either low-threshold IG or mode-selective GG versions may be intentionally used for different VCSEL applications. Lasing thresholds of OC IG VCSELs have been found to be very sensitive to the exact localisation of their thin oxide apertures, which should be shifted as close as possible towards the anti-node position. PI VCSELs, on the other hand, are simpler and cheaper in their manufacturing than OC ones. Although lower threshold currents are manifested by PI VCSELs with very thick implanted regions, lower threshold powers are achieved in these devices with much thicker upper unaffected layer used for the radial current flow from the ring contact towards the laser axis. Paradoxically poor thermal properties of PI VCSELs enable lower lasing thresholds of slightly detuned devices. To conclude, cheaper and mode-selective PI VCSELs may be used instead of OC ones in many of their applications provided ambient temperatures and laser outputs are not too high.

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“…In lossy (or gain) medium, they may be combined to give the vector wave equation of the following form [1] ( )…”

Section: Optical Vcsel Modelsmentioning

confidence: 99%

“…Therefore, in designing modern diode-laser structures, only comprehensive and self-consistent approaches should be used, requiring, however, complex and time-consuming iterative calculation algorithms. The above conclusion is especially justified in the case of vertical-cavity surface-emitting diode lasers (VCSELs) [1] because VCSEL structures of cylindrical symmetry makes modelling of physical phenomena within their volumes even more involved than in the case of Cartesian-geometry in-plane (edge-emitting) diode lasers.…”

Section: Introductionmentioning

confidence: 99%

Principles of VCSEL designing

Nakwaski

2008

Opto-Electronics Review

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Comprehensive computer simulations are currently the most efficient and cheap methods in designing and optimisation of semiconductor device structures. Seemingly they should be as exact as possible, but in practice it is well known that the most exact approaches are also the most involved and the most time-consuming ones and need powerful computers. In some cases, cheaper somewhat simplified modelling simulations are sufficiently accurate. Therefore, an appropriate modelling approach should be chosen taking into account a compromise between our needs and our possibilities.Modelling of operation and designing of structures of vertical-cavity surface-emitting diode lasers (VCSELs) requires appropriate mathematical description of physical processes crucial for devices operation, i.e., various optical, electrical, thermal, recombination and sometimes also mechanical phenomena taking place within their volumes. Equally important are mutual interactions between above individual processes, usually strongly non-linear and creating a real network of various inter-relations.Chain is as strong as its weakest link. Analogously, model is as exact as its less exact part. Therefore it is useless to improve exactness of its more accurate parts and not to care about less exact ones. All model parts should exhibit similar accuracy. In any individual case, a reasonable compromise should be reached between high modelling fidelity and its practical convenience depending on a main modelling goal, importance and urgency of expected results, available equipment and also financial possibilities. In the present paper, some simplifications used in VCSEL modelling are discussed and their impact on exactness of VCSEL designing is analysed.

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Three-Dimensional Simulation of Vertical-Cavity Surface-Emitting Semiconductor Lasers

Cited by 16 publications

References 150 publications

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

Principles of VCSEL designing

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