Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor

Abstract

In this paper we establish a three-dimensional (3D) numerical simulation model of domestic SiGe heterojunction bipolar transistor (SiGe HBT) by using technology computer aided design tools, to study the bias effect on single event effect (SEE) of SiGe HBT. The response relationship between SEE and the bias of SiGe HBT is identified based on the analyses of transient current peak and charge collection of each terminal. The results show that the worst biases for SEE are different for different terminals. Even for the same terminal, the worst biases for charge collection and transient current peak are different. This phenomenon is caused mainly by the influence of applied electric field and the change of carrier transport mode.

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

“…Subsequently, a large number of charges are further collected through the diffusion mechanism due to the doping gradient in the device. [16] The TID damage is caused by two kinds of defects, i.e., oxide-trap charge and interface trap. [17] First, some metastable oxide-trap charges are captured by the intrinsic defect in oxide bulk with a shallow energy level and annealed easily.…”

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

“…Figure 2 shows the internal structure and the impurities distribution of the SiGe HBT. In our previous work, [14][15][16] the Gummel characteristic and output characteristic calculated by simulation are compared with that characteristics measured by KEITH-LEY 4200. The results show that the model is in relatively agreement with the actual device.…”

“…Our earlier works found that the large transient current and serious charge collection of collector and substrate were identified as the key mechanism of SEEs in this SiGe HBT. [14][15][16] These phenomena are caused by the funneling potential disturbance at the large C/S junction and in consequence the C/S junction is regarded as the sensitive volume of the SiGe HBT. In addition, through the microbeam laser experiment [17] and TCAD simulation, [18] the area of the C/S junction is inferred to be related to the SEEs of the SiGe HBT.…”

“…[12,13] Our team has been working on the SEEs of the SiGe HBT since 2010, including the influence of bias conditions, angle of ions striking, and extreme environment on SEEs. [14][15][16] According to these researches, it is inferred that the SEEs of SiGe HBT is likely related to the fabrication process information such as structure size and doping concentration. However, the SEEs of SiGe HBT for dif-ferent processes are rarely reported.…”

Investigation of laser-induced single event effect on SiGe BiCMOS low noise amplifiers

“…Sdevice模块 可提供Heavy Ion模型, 可用于仿真单粒子效应的 过剩载流子产生. 该模型计算沿离子轨道轴分布的 电子-空穴对生成率, 通过求解载流子连续性方程 和泊松方程, 开展重离子入射半导体器件的数值模 拟 [34][35][36][37] . (1)式 表 示 电 离 径 迹 与 入 射 点 距 离 为 l (l小于电离径迹总长度l max ) 的位置的电子空穴对 产生率:…”