Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm

Kunitake, Hitoshi; Tsuda, Kazuki; Saito, Shigemi; Okuno, Naoki; Takahashi, Masahiro; Oota, Masashi; Hamada, Toshiki; Asami, Y.; Sawai, Hiromi; Kurata, M.; Endo, T.; Sugaya, Kentaro; Nakano, Masaru; Hodo, Ryota; Sasagawa, Shinya; Ono, T.; Murakawa, Tsutomu; Wakuda, Masahiro; Yamazaki, Shunpei

doi:10.21203/rs.3.rs-1215280/v1

Cited by 1 publication

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“…The insertion of a buffer layer between the active layer and the bottom gate insulating film (BGI) can also change the character of the surface. [184] By leveraging the disparity in electron affinity between the buffer layer and active layer or by introducing negative charges at the interface between the BGI and buffer layer, it is possible to enhance the controllability of top-gate electrode. This, in turn, enables an increase in the current drive capacity, thereby mitigating the negative shift in V TH .…”

Section: Igzo-based Capacitor-less Dynamic Random Access Memory (Dram)mentioning

confidence: 99%

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Yan,

Wang,

Yan

et al. 2023

Adv Funct Materials

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High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized.

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Section: Igzo-based Capacitor-less Dynamic Random Access Memory (Dram)mentioning

confidence: 99%