Three methods for the growth of InGaN nanostructures by MOVPE

Abstract

InGaN nanostructures have been grown (i) by a droplet epitaxy route, (ii) by pre-treatment of the GaN pseudo-substrate with SiH 4 and NH 3 , and (iii) by annealing an InGaN epilayer under a H 2 flux. The various methodologies are discussed in the context of possible device applications and of studies of the physics of single nitride quantum dots.

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot

“…An uncapped sample was also grown, which was cooled rapidly following the anneal step and examined by AFM. As we have previously reported for other similar samples [10], the uncapped film exhibited pits penetrating through its entire depth, and small nanostructures 1-2 nm in height were seen both on the film surface and in the bottom of the pits [11]. We have shown [10] that these nanostructures are predominately metallic, and suggested that they re-react with ammonia during the capping process.…”

“…We have shown [10] that these nanostructures are predominately metallic, and suggested that they re-react with ammonia during the capping process. We refer to this quantum dot formation mechanism as a modified droplet epitaxy route [11]-it is clearly distinct from the more common Stranski-Krastanov growth mechanism.…”

Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

“…4(b)). Additionally, when a 2.5 nm InGaN layer is grown on a GaN surface annealed for 240 s with an SiH 4 flux, 3D island formation is seen [8], whereas without the SiH 4 treatment step flow growth occurs. This type of behaviour has been observed in GaN/ AlGaN growth and the growth mode change is attributed to the formation of a SiN x layer, forming a ''nano-mask'' on the AlGaN surface [9].…”