Three Multiterminal Silicon Power Chips for an Optimized Monolithic Integration of Switching Cells: Validation on an H-Bridge Inverter

Abstract

The paper deals with the monolithic integration in silicon of a multi-phase static power converter (DC/AC or AC/DC) for medium power applications from few kilowatts to few tens of kilowatts. The power devices blocking capability is in the range of 600V to 1200V. The authors present an original 3chip integration approach that combines both monolithic integration in silicon and Printed Circuit Board (PCB) packaging process. It allows for taking advantage of both silicon level technology as well as PCB level technology within a limited and well-mastered complexity. Indeed, the multiphase converter is integrated within three new multi-terminal power chips, that are then judiciously packaged on a PCB board so as to minimize both the switching cell stray inductance as well as the impact of voltage variations (dv/dt) across the common mode stray capacitance of the assembly. The static as well as dynamic operating modes of the proposed multi-terminal power chips were validated using 2D-Sentaurus TM TCAD simulations. The realized chips were assembled on a PCB board to realize both classical as well as 3-chip based H-bridge inverters. First characterization results validate the electrical operating modes of the H-bridge inverter realized according to the 3-chip approach.

Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology

“…2 (a), the high-side row multi-terminal chip is directly bonded by its backside on a DBC/IMS substrate [3]. However, the low-side row multi-terminal chip is advantageously flipped and is bonded by its source side as previously proposed [11][12]. In this configuration the switching loop is not planar-type as in a standard drain-side soldering packaging but orthogonal-type with a lowering loop area.…”