Three stage 6&amp;#x2013;18 GHz high gain and high power amplifier based on GaN technology

Mouginot, Guillaume; Ouarch, Z.; Lefebvre, B.; Heckmann, S.; Lhortolary, J.; Baglieri, D.; Floriot, D.; Camiade, M.; Blanck, H.; Pipec, M. Le; Mesnager, D.; Helleye, P. Le

doi:10.1109/mwsym.2010.5515897

Cited by 13 publications

(6 citation statements)

References 2 publications

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“…It purposely decreases the Q- factors by inserting lossy matching components at the gate of the transistors [11][12][13][14]. This approach improves the gain bandwidth, while sacrificing peak gain, peak output power, and power efficiency.…”

Section: Design Of a Reactive Matched Gan Pamentioning

confidence: 99%

6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching

Kim¹,

Choi²,

Lee³

et al. 2016

Journal of electromagnetic engineering and science

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A commercial 0.25 μm GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency (Fmax). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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Section: Design Of a Reactive Matched Gan Pamentioning

confidence: 99%

6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching

Kim¹,

Choi²,

Lee³

et al. 2016

Journal of electromagnetic engineering and science

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“…Some semiconductor companies have GaN HPA solutions over the [6][7][8][9][10][11][12][13][14][15][16][17][18] GHz band and several articles about reactively matched HPAs have been published up to date [5][6][7][8][9][10][11][12]. Nevertheless, most of them are manufactured outside Europe.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

Gigorro

Pascual

Martínez

et al. 2019

Int. J. Microw. Wireless Technol.

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A 6–18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 µm gate length process, GH25. A study of the suitable attachment method and measurement on wafer and on jig are detailed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation with a duty cycle of 10% with a 25 µs pulse width.

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“…Although multi-stage reactively matched amplifier MMICs with parallel matching networks have been reported, they have weak return loss capabilities. UMS demonstrated a reactive-type HPA with a high gain of around 20 dB, but with degraded return losses [7], [8].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss

Jeong¹,

Jang²,

Shin³

et al. 2016

ETRI J

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An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25-m AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Langecouplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range. Keywords: Gallium nitride (GaN), microwave monolithic integrated circuit (MMIC), high power amplifier (HPA), wideband, return loss, electronic warfare (EW).Manuscript received Dec. 11, 2015; revised Mar. 15, 2016; accepted Apr. 5, 2016. This work was supported by the Agent for Defense Development, Korea (15AR2200, The wide-band semiconductor phased array transmitter technology).Jin-Cheol Jeong (corresponding author, jcjung@etri.re.kr), Dong-Pil Jang (dpjang@etri. re.kr), Dong-Hwan Shin (dh-shin@etri.re.kr), and In-Bok Yom (ibyom@etri.re.kr) are with the Broadcasting

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Three stage 6–18 GHz high gain and high power amplifier based on GaN technology

Cited by 13 publications

References 2 publications

6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching

6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching

Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss

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