Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers

Rosenzweig, M.; Möhrle, Martin G.; Duser, H.; Venghaus, H.

doi:10.1109/3.90008

Cited by 86 publications

(25 citation statements)

References 19 publications

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“…Figure 1 shows that four resonances provide a good fit to the semiconductor gain spectrum [6]. We found that spatially resolving the carrier lifetime and incorporating carrier diffusion was essential in achieving a physically realistic number of lasing modes.…”

Section: Methodsmentioning

confidence: 91%

Coherent interactions and long term evolution of ultrafast transients in a semiconductor laser

O'Rourke

Boehringer

Klaedtke

et al. 2005

2005 IEEE LEOS Annual Meeting Conference Proceedings

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IntroductionThe interaction of short optical pulses with laser cavity modes is important in, for example, formation of mode-locked pulse trains, optical clock recovery, and external optical feedback [1]. In a dispersive nonlinear medium such as a semiconductor, a treatment of the optical field is required which goes beyond discrete modal frequencies. A description of coherent interactions requires resolution of the fast oscillating carrier wave on the femtosecond timescale, while the return to equilibrium may take place over nanoseconds due to a long cavity lifetime or relaxation oscillation period. In inhomogeneous structures such as multi-section or DFB lasers, sub-wavelength to millimeter spatial scales must also be described.The spatio-temporal dynamics of the electric field may be calculated from Maxwell's equations using a finite-difference time-domain (FDTD) method. Coupling a Lorentzian resonance allows an approximate model of the optical gain [2]. Realistic microscopic models of the semiconductor gain based on the semiconductor Bloch equations [3] are at present too computationally intensive for simulation over such a range of temporal scales.We consider a class of recent experiments in which a short optical pulse is injected into a semiconductor laser diode, allowing a study of the pulse-cavity interactions on time-scales shorter than the cavity roundtrip time. In addition to the expected pulse broadening and relaxation oscillations, new phenomena such as stable, long-lived 'dark pulses' were observed [4,5]. Numerical MethodsWe have coupled an FDTD calculation of the electric field with multiple Lorentzian resonances which approximate the spectral dependence of the semiconductor gain. Figure 1 shows that four resonances provide a good fit to the semiconductor gain spectrum [6]. We found that spatially resolving the carrier lifetime and incorporating carrier diffusion was essential in achieving a physically realistic number of lasing modes. Results and discussionDuring the propagation of a short pulse through a population-inverted semiconductor a region of depleted gain is left behind the injected pulse. For a laser under CW operation this region of depleted gain can evolve into a long lived 'dark pulse'. Figure 2 shows the simulated output from the laser facet following the injection of an optical pulse with a central frequency of 193 THz, resonant with the CW emission wavelength. The initial perturbation induces relaxation oscillations (period ~ 50 ps) which persist for ~400 ps. A bright pulse is emitted from the facet every ~7 ps, after each cavity round-trip. The amplitude of successive bright pulses decays on the timescale of a few hundred ps. A dark pulse forms after the first few round trips, and is the dominant feature after ~200 ps. On a longer time scale, this feature oscillates (with ~500 ps period) between a predominantly bright and dark pulse superimposed on the CW emission. All of this behavior is in good qualitative agreement with experimental results [4]. Inset (A) of Figure 2 shows the ...

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Section: Methodsmentioning

confidence: 91%

Coherent interactions and long term evolution of ultrafast transients in a semiconductor laser

O'Rourke

Boehringer

Klaedtke

et al. 2005

2005 IEEE LEOS Annual Meeting Conference Proceedings

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“…We call this device a 1G (1 st Generation) Si laser. The threshold current density of the 1G Si laser was 1.1 kA/cm 2 , which was as large as that of a near-infrared semiconductor laser fabricated from InGaAsP, which is a direct-transition-type compound semiconductor [7]. A dressed-photon is a quasiparticle representing a coupled state between a photon and an electron at the nanoscale [8].…”

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confidence: 99%

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

Tanaka

Kawazoe

Ohtsu

et al. 2015

Fluorescent Materials

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Abstract:We fabricated a silicon (Si) laser by applying a dressed-photon-phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon-insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing light waveguides. We designed light waveguides having a thickness of 15 µm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 µm. The intensity of amplified spontaneous emission (ASE) light was too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm 2 from the currentvoltage characteristic. This threshold current density was twenty-eight times smaller than that of a Si laser we fabricated previously.

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“…It is also the tool of choice for engineers to model devices such as lasers and photodetectors. [13][14][15][16][17][18] Also, its use is widespread in the calculation of transmission coefficients [19][20][21] and quasibound state lifetimes, 22,23 with application to the modeling of resonant tunneling devices.…”

Section: Introductionmentioning

confidence: 99%

Numerical spurious solutions in the effective mass approximation

Cartoixà

Ting

McGill

2003

Journal of Applied Physics

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We have characterized a class of spurious solutions that appears when using the finite difference method to solve the effective mass approximation equations. We find that the behavior of these solutions as predicted by our model shows excellent agreement with numerical results. Using this interpretation we find a set of analytical expressions for conditions that the Luttinger parameters must satisfy to avoid spurious solutions. Finally, we use these conditions to check commonly used sets of parameters for their potential for generating this class of spurious solutions.

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Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers

Cited by 86 publications

References 19 publications

Coherent interactions and long term evolution of ultrafast transients in a semiconductor laser

Coherent interactions and long term evolution of ultrafast transients in a semiconductor laser

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

Numerical spurious solutions in the effective mass approximation

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