Threshold current reduction for the metal–insulator transition in NbO<sub>2−<i>x</i></sub>-selector devices: the effect of ReRAM integration

Nandi, Sanjoy Kumar; Liu, Xinjun; Venkatachalam, Dinesh Kumar; Elliman, R. G.

doi:10.1088/0022-3727/48/19/195105

Cited by 84 publications

(78 citation statements)

References 18 publications

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“…The alternative mechanism of diffusion or electromigration of oxygen (vacancies) has also been discussed in terms of the IMT in niobium oxides 11, 28, 29 . The values of the diffusion barrier height of roughly 290–550 meV deduced from the diffusion studies in Nb 2 O 5 reported in ref.…”

Section: Resultsmentioning

confidence: 99%

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

Park

Hadamek

Posadas

et al. 2017

Sci Rep

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NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various voltages and temperatures. Based on the investigation, we reveal that the origin of leakage current in NbOx is partly due to insufficient Schottky barrier height originating from interface defects between the electrodes and NbOx layer. The leakage current problem can be addressed by inserting thin NiOy barrier layers. The NiOy inserted NbOx device is drift-free and exhibits high Ion/Ioff ratio (>5400), fast switching speed (<2 ns), and high operating temperature (>453 K) characteristics which are highly suitable to selector application for x-point memory arrays. We show that NbOx device with NiOx interlayers in series with resistive random access memory (ReRAM) device demonstrates improved readout margin (>29 word lines) suitable for x-point memory array application.

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Section: Resultsmentioning

confidence: 99%

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

Park

Hadamek

Posadas

et al. 2017

Sci Rep

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“…Nandi et al, in ref. 17, for example, show that, in the case of oxide lms deposited by atomic layer deposition (ALD), rougher interfaces produce less stable switching and reduced cycling endurance, although they also report a lowering of the electroforming voltage. Their nite element models suggest that high aspect ratio asperities (projections of the electrode material into the oxide) can result in local eld enhancements of more than an order of magnitude.…”

Section: 15mentioning

confidence: 99%

The interplay between structure and function in redox-based resistance switching

Kenyon

Munde

et al. 2019

Faraday Discuss.

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We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an initial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages.Any contribution to these effects from field enhancement at rough interfaces is secondary to changes in oxide microstructure templated by interface structure.

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“…It might even be increased by stacking multiple layers of passive matrices to a 3D structure. [7][8][9][10][11][12][13][14][15][16][17][18] Threshold devices show an abrupt resistance change at a certain voltage stress V Th,ON . [ 1,4 ] This serious issue is alleviated by either complementary resistive switching devices or by the integration of a selector device in addition to the passive ReRAM, so called "1S1R" structures.…”

Section: Introductionmentioning

confidence: 99%

“…Among the different selectors threshold switching devices are highly interesting as they are favorable for lowvoltage operation and often provide an inherent combination of the threshold-type selector property and the memristive nonvolatile switching in a single "1Th1M" cell. [ 9,[12][13][14]18 ] The second issue is the absolute change in the current at the threshold voltage that can be huge, clearly more than a factor of hundred. [7][8][9][10][11][12][13][14][15][16][17][18] Threshold devices show an abrupt resistance change at a certain voltage stress V Th,ON .…”

Section: Introductionmentioning

confidence: 99%

Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model

Funck

Menzel

Aslam

et al. 2016

Adv Elect Materials

111

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Volatile threshold switching devices have attracted great attention for use as selectors in passive crossbar arrays. These devices show an abrupt hysteretic jump in the current–voltage characteristic and thus offer very high selectivity. As this nonlinearity appears for either voltage polarity, threshold switches are an ideal selector for bipolar‐switching redox‐based resistive memories. To date, the predominant explanation of the threshold‐switching phenomenon in NbO2 and related materials is the insulator‐to‐metal transition that occurs at a certain temperature and is connected to a phase transition. However, some essential experimental findings are not satisfactorily explained. Here, a multidimensional simulation of the threshold switching in NbO2 is presented that overcomes these shortcomings. The model is based on an electric field‐induced thermal runaway that increases the amount of mobile charge carriers in the device. Applying this model in a simulation correctly predicts the experimentally observed threshold‐type current–voltage characteristic, inclusive of important features like the narrow opening of the hysteresis and the magnitude of the current jump. Furthermore, the simulation enables to discuss different influencing parameters independently at spatial resolution. The model is also applicable to a wider class of materials showing the threshold switching, but does not show a temperature‐induced insulator‐to‐metal transition.

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Threshold current reduction for the metal–insulator transition in NbO_2−x-selector devices: the effect of ReRAM integration

Cited by 84 publications

References 18 publications

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

The interplay between structure and function in redox-based resistance switching

Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model

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Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration

Cited by 84 publications

References 18 publications

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

The interplay between structure and function in redox-based resistance switching

Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model

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Threshold current reduction for the metal–insulator transition in NbO_2−x-selector devices: the effect of ReRAM integration

Multidimensional Simulation of Threshold Switching in NbO₂ Based on an Electric Field Triggered Thermal Runaway Model