Threshold electrical switching in bulk As-Te-In glasses: composition dependence and topological effects

High field electrical switching behavior of Ge10Se90−xTlx glasses

“…Such an increase is normally seen in both glass transition temperatures and the switching voltages of many chalcogenide systems, with an addition of metal atoms which coordinate tetrahedrally [30,31]. However, in the present Ge-Se-Tl samples, the network connectivity is attained only by the interaction of Tl + Se À GeSe 2/ 2 Se À Tl + structural units containing weaker ionic Se-Tl bonds.…”

“…In chalcogenide glasses, both T g [29,30] as well as V T [25,31] are known to increase with network connectivity and rigidity. Such an increase is normally seen in both glass transition temperatures and the switching voltages of many chalcogenide systems, with an addition of metal atoms which coordinate tetrahedrally [30,31].…”

The electrical switching and thermal behavior of bulk Ge15Te85−xSnx and Ge17Te83−xSnx glasses

“…In general, metallic elements are considered to enter the chalcogen glassy network samples, with a four-fold or higher coordination, increasing the network connectivity [37][38][39]. The earlier work suggests that Sn atoms are either four-fold or six-fold coordinated in a similar Ge-Se(S)-Sn glassy system [40].…”

Network topological thresholds in gallium doped As–Te glasses – Electrical and thermal investigations

“…exhibit interesting electrical and thermal properties. While As-Te-In glasses exhibit threshold switching over a very wide range of compositions [1], As-Te-Tl samples [2] have been found to show memory behavior. As-Te-Al samples, on the other hand, exhibit a composition dependent electrical switching (memory/threshold) [3].…”