Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain

Li, Yiming; Cheng, Hui; Hwang, Chi Hong

doi:10.1166/jnn.2012.6195

Cited by 4 publications

(1 citation statement)

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“…Notably, the aspect ratio was given from a fixed axis, so it would also be helpful to interpret the result versus the device dimension using the plot of a Pelgrom model. Although we have applied the Pelgrom model to explore the variability of fin-type field-effect transistors (FinFETs) [36], the same model, we assumed, can be applied to examine the variability of a GAA NW MOSFET device.…”

Section: Resultsmentioning

confidence: 99%

Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

Chen

Chuang

et al. 2019

Materials

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In this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cross-sections on a 10 nm gate gate-all-around (GAA) nanowire (NW) metal–oxide–semiconductor field-effect transistor (MOSFET) device. The associated timing and power fluctuations of the GAA NW complementary metal–oxide–semiconductor (CMOS) circuits are further estimated and analyzed simultaneously. The experimentally validated device and circuit simulation running on a parallel computing system are intensively performed while considering the effects of WKF and various ARs to access the device’s nominal and fluctuated characteristics. To provide the best accuracy of simulation, we herein calibrate the simulation results and experimental data by adjusting the fitting parameters of the mobility model. Transfer characteristics, dynamic timing, and power consumption of the tested circuit are calculated using a mixed device–circuit simulation technique. The timing fluctuation mainly follows the trend of the variation of threshold voltage. The fluctuation terms of power consumption comprising static, short-circuit, and dynamic powers are governed by the trend that the larger the grain size, the larger the fluctuation.

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Section: Resultsmentioning

confidence: 99%