In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-κ/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.

We have studied the Ni and Co germano-silicide on Si 0 3 Ge 0 7 Si. The Ni germano-silicide shows a low sheet resistance of 4-6 on both P + N and N + P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 10 8 A cm 2 and 2 10 7 A cm 2 are obtained for Ni germano-silicide on P + N and N + P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.

The rapid advancements of synthetic biology show promising potential in biomedical and other applications. Recently, recombinases were proposed as a tool to engineer genetic logic circuits with long-term memory in living and even mammalian cells. The technology is under active development, and the complexity of engineered genetic circuits grows continuously. However, how to minimize a genetic circuit composed of recombinase-based logic gates remain largely open. In this paper, we formulate the problem as a cubic-time assignment problem and solved by a 0/1-ILP solver to minimize DNA sequence length of genetic circuits. Experimental results show effective reduction of our optimization method, which may be crucial to enable practical realization of complex genetic circuits.

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