Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications

Meneghesso, Gaudenzio; Silvestri, Riccardo; Meneghini, Matteo; Cester, A.; Zanoni, Enrico; Verzellesi, Giovanni; Pozzovivo, G.; Lavanga, S.; Detzel, Thomas; Häberlen, Oliver D.; Curatola, G.

doi:10.1109/irps.2014.6861109

Cited by 21 publications

(18 citation statements)

References 9 publications

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“…Due to trapping mechanisms, V th is shifted to more negative values with respect to the initial measurement after the application of the stress pulses. This behavior was recently attributed to electron traps in the GaN channel that are empty under measurement conditions [14]. The threshold voltage shift is given in percentage of the initial values (Eq.…”

Section: Experiments Inmentioning

confidence: 98%

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Decoupling of epitaxy‐related trapping effects in AlGaN/GaN metal–insulator semiconductor high‐electron‐mobility transistors

Huber

Pozzovivo

Daumiller

et al. 2016

Physica Status Solidi (a)

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The decoupling of epitaxial factors influencing the dynamic instabilities of AlGaN/GaN metal–insulator semiconductor high‐electron‐mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage (Vth shift). Secondary ion mass spectroscopy and steady‐state photoluminescence (PL) measurements have been performed in conjunction with electrical characterization. The device dynamic performance is found to be significantly dependent on both the C concentration next to the channel, on the distance between the channel, and the higher doped C region. Additionally, we note that experiments studying trapping should avoid large variations in the sheet carrier density (Ns). This change in the Ns itself has a significant impact on the Vth shift. These experimental trends are also supported by a basic model and device simulation. Finally, the relationship between the yellow luminescence (YL) and the band edge (BE) ratio and the Vth shift is investigated. As long as the basic layer structure is not changed, the determination of the YL/BE ratio obtained from steady‐state PL is demonstrated to be a suitable way to predict trap concentrations in the GaN channel layer. Vth shift for a device stressed at VDS= 200 V and VGS=−20 V plotted on top of the sheet carrier density of the channel. Model: fitting of calculated relative Vth shift for varying Ns and Ntrap values.

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Section: Experiments Inmentioning

confidence: 98%

“…Others pointed out that a significant part of the trapping also takes place at the interface between the dielectric and the III-nitride semiconductor [12,13]. Combinations of these mentioned mechanisms have also been reported [14]. A typical signature of C doping of GaN is a broad yellow luminescence (YL) band around 2.2 eV.…”

Section: Introductionmentioning

confidence: 99%

Decoupling of epitaxy‐related trapping effects in AlGaN/GaN metal–insulator semiconductor high‐electron‐mobility transistors

Huber

Pozzovivo

Daumiller

et al. 2016

Physica Status Solidi (a)

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“…Device simulations are carried out with the Sentaurus Device code by Synopsys Inc. C doping is modeled by means of acceptor-and donor-like traps associated to CN and CGa states, respectively [4,5]. In a previous work, trap-related dispersion effects and threshold-voltage instabilities have been associated in the devices under study to a dominant acceptorlike behavior of C doping related to CN states [2], whereas negligible trapping effects have been found in devices where C doping resulted in the formation of perfectly self-compensating CGa-CN states [1]. In the simulations of lateral ohmic-to-ohmic structures, the Ar isolation implant is modeled by following [6].…”

Section: Test Devices and Numerical Modelsmentioning

confidence: 99%

“…It is worth emphasizing that the detailed description of trap states in the GaN channel and buffer layers resulting from our previous analysis of trap-related effects in this technology [2] turned out to be instrumental to achieving a "quantitative" breakdown prediction like that shown in Figs. 1 and 2.…”

Section: E-11mentioning

confidence: 99%

“…In [1] and [2], we have analyzed the trap effects in AlGaN/GaN power MIS-HEMTs, pointing out the possible impact of buffer Carbon (C) doping on current collapse and threshold-voltage instabilities. In this paper, we address the offstate breakdown behavior of devices of the same technology by comparing measurements and device simulations, with the aim of further extending the capabilities of the device-to-system "virtual prototyping" approach to GaN technology modeling proposed in [3].…”

Section: Introductionmentioning

confidence: 99%

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Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications

Curatola

Huber

Daumiller

et al. 2015

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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A consistent description of breakdown characteristics in ohmic-to-ohmic, ohmic-to-substrate and HEMT structures has been achieved by means of device simulations for a depletion-mode AlGaN/GaN MIS-HEMT technology on Si substrate suited for power switching applications. For relatively short gate-drain distances or ohmic-to-ohmic spacings, source-drain punch-through is suggested to be the limiting breakdown mechanism in either HEMTs under off-state conditions or ohmic-to-ohmic isolation test structures, respectively. The mechanism ultimately limiting the HEMT off-state voltage blocking capability is instead the vertical drain-to-substrate breakdown for long gate-drain spacings. The latter phenomenon is induced, in HEMTs on a low-resistivity p-type substrate like those considered here, by the triggering of a high-field carrier generation mechanism rather than by carrier injection

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The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates

Zagni

Chini

Puglisi

et al. 2019

Physica Status Solidi (a)

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In this work, the critical role of carbon doping in the electrical behavior of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on semi-insulating SiC substrates is assessed by investigating the off-state three terminal breakdown, current collapse and dynamic on-resistance recovery at high drain-source voltages. Extensive device simulations of typical GaN HEMT structures are carried out and compared to experimental data from published, state-of-the-art technologies to: i) explain the slope of the breakdown voltage as a function of the gate-to-drain spacing lower than GaN critical electric field as a result of the non-uniform electrical field distribution in the gate-drain access region; ii) attribute the drain current collapse to trapping in deep acceptor states in the buffer associated with carbon doping; iii) interpret the partial dynamic on-resistance recovery after off-state stress at high drain-source voltages as a consequence of hole generation and trapping.

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Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications

Cited by 21 publications

References 9 publications

Decoupling of epitaxy‐related trapping effects in AlGaN/GaN metal–insulator semiconductor high‐electron‐mobility transistors

Decoupling of epitaxy‐related trapping effects in AlGaN/GaN metal–insulator semiconductor high‐electron‐mobility transistors

Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications

The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates

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