Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress

Jahinuzzaman, Shah M.; Sultana, Abeda; Sakariya, K.; Servati, Peyman; Nathan, Arokia

doi:10.1063/1.1993766

Cited by 75 publications

(63 citation statements)

References 13 publications

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“…1, 3͑c͒, and 4͔ and explained by the fact that highly crystalline CLC poly-Si has a few densities of tail states to accommodate accumulated carriers, inhibiting markedly deep-state generation in channel layers by bias stressing. 20,21 Under gate-bias stressing ͑or HCS with no drain bias͒, in thicker channels with greater channel crystallinity, the carrier-trapping effect is weaker because grain defects are fewer and so the change in V t is smaller and larger exponents are associated with the ⌬V th , as observed in currently used devices ͓Figs. 3͑c͒ and 4͔.…”

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confidence: 96%

Stability of continuous-wave laser-crystallized epilike silicon transistors

Lin

Chen

Shieh

et al. 2007

Applied Physics Letters

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Stability of high-hole-mobility thin-film transistors (TFTs) on single-grainlike silicon channels formed by continuous-wave laser crystallization during hot-carrier stressing (HCS) was studied. As channel layers become thicker, laser-mediated channel crystallinity increases, increasing channel roughness. On such epilike polycrystalline silicon substrates, the poorer interface quality for thicker channels, even those with lower tail-state densities of grain traps, is responsible for the extensive charge trapping and creation of deep-state densities in the fabricated TFTs due to HCS. Hence, on a thin channel with a thickness of 50nm and ultrasmooth surfaces, HCS hardly degrades the electrical parameters of the devices.

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confidence: 96%

Stability of continuous-wave laser-crystallized epilike silicon transistors

Lin

Chen

Shieh

et al. 2007

Applied Physics Letters

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“…In particular, the positive shift of the threshold voltage (V th ) leads to a reduction in the luminance and causes image problems in OLEDs. 24,[27][28][29][30] Thus, a highly stable material is desirable. Using the concept of a vacancy suppressor in amorphous films, further intentional doping of the base oxide with metals has been demonstrated.…”

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confidence: 99%

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

et al. 2015

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The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.

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“…Another aspect that is worth mentioning is that most of the final DV T is verified after the first 24 h of stress and the data do not show a trend to a continuous increase in this value with time, so it might be expected that even with longer stress times the obtained DV T should not be very different from the 0.69 V obtained here. It is also interesting to compare these values with the ones typically found in the literature for a-Si:H TFTs: DV T exceeding 6 V (one order of magnitude higher) is obtained under the same testing procedure in [100], which is a good indication of the excellent stability of amorphous oxide semiconductors. Figure 6.35 shows some prototypes of a-GIZO matrices produced in our laboratory, while Figure 6.36 shows a working display with a resolution of 128 Â 128 pixels.…”

Section: Tft Stability Under Constant Current Stressmentioning

confidence: 67%