Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology

Abstract

<p class="MsoNormal" style="text-align:justify;"> <span lang="EN-US">This paper investigates the threshold voltage sensitivity to metal gate work-function for n-channel double gate fin field-effect transistor (FinFET) structures and evaluates the short channel performance of the device using threshold voltage dependence on metal gate work-function analysis. We carried out the study for a double gate n-channel fin field-effect transistor (n-FinFET) with parameters as per the projection report of International Technology Roadmap for Semiconductors, ITRS-2011 for low standby power (LSTP) 20</span><span lang="EN-US"> </span><span lang="EN-US">nm gate length technology node. In the present study device simulation have been carried out using PADRE simulator from MuGFET, which is based on the drift-diffusion theory. Our results show the accuracy and validity of classical drift-diffusion simulation results for transistor structures with lateral dimensions 10nm and above. The subthreshold behavior of device improves with increased metal gate work-function. The results also show that a higher gate work-function (≥5</span><span lang="EN-US"> </span><span lang="EN-US">eV) can fulfill the tolerable off-current as projected in ITRS 2011 report. The SCE in FinFET can reasonably be controlled and improved by proper adjustment of the metal gate work-function. DIBL is reduced with the increase in gate work function.</span> </p

Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations

“…Further V in is the additional surface potential to 2f f that is needed for ultrathin body devices to bring enough inversion charges into the channel region of the transistor to reach threshold point. Therefore, the WF of gate electrode is the main parameter for threshold voltage determination in case of multi-gate devices [13]. In FinFET technologies, as a result of the shape of active fins, the fin channel is preferred to be low-doped for minimizing threshold voltage variations related to random doping fluctuations (RDF).…”

Performance evaluation of FinFET and Nanowire at different technology nodes

“…Here again the oxide thickness, channel length and doping concentration has been varied in order to simulate the graphs. There are many options that are available after simulating the graphs such as IV characteristics, Trans conductance, doping profile, potential profile and so on [7].…”

Impact of gate workfunction fluctuation on FinFET standard cells

“…These works highlight the deep impact of WFF in threshold voltage and I ON and I OFF currents [5][6][7][8][9][10][11][12][13].…”

“…Further, V in is the additional surface potential to 2f f that is needed for ultrathin body devices to bring enough inversion charges into the channel region of the transistor to reach threshold point. Therefore, the workfunction of gate electrode is the main parameter for threshold voltage determination in case of multigate devices [11].…”