Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Johnson, Derek W.; Lee, Rinus T. P.; Hill, Richard J.; Wong, Man Hoi; Bersuker, G.; Piner, Edwin L.; Kirsch, P. D.; Harris, H. R.

doi:10.1109/ted.2013.2278677

Cited by 58 publications

(32 citation statements)

References 16 publications

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“…Several papers reported that different gate bias conditions cause the V th shifts in MIS HEMTs. [13][14][15] Fixed charges in insulator films, 28,50) border traps 51) and interface states at the insulators/AlGaN interfaces are involved in the V th shift mechanism. As shown in Fig.…”

Section: Th Fluctuation Issue In Mis Algan/gan Hemtsmentioning

confidence: 99%

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Yatabe

Hori

et al. 2014

Jpn. J. Appl. Phys.

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This paper presents a systematic characterization of electronic states at insulators/(Al)GaN interfaces, particularly focusing on insulator/AlGaN/ GaN structures. First, we review important results reported for GaN metal-insulator-semiconductor (MIS) structures. SiO 2 is an attractive material for MIS transistor applications due to its large bandgap and high chemical stability. In-situ SiN x is effective for improving the operation stability of high electron mobility transistors (HEMTs). Meanwhile, Al 2 O 3 /GaN structures have high band offsets and low interface state densities, which are also desirable for insulated gate applications. We have proposed a calculation method for describing capacitance-voltage (C-V) characteristics of HEMT MIS structures for evaluating electronic state properties at the insulator/AlGaN interfaces. To evaluate near-midgap states at insulator/ AlGaN interfaces, a photo-assisted C-V technique using photon energies less than the bandgap of GaN has been developed. Using the calculation in conjunction with the photo-assisted C-V technique, we estimate interface state density distributions at the Al 2 O 3 /AlGaN interfaces.

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Section: Th Fluctuation Issue In Mis Algan/gan Hemtsmentioning

confidence: 99%

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Yatabe

Hori

et al. 2014

Jpn. J. Appl. Phys.

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“…7,8,31 Figure 4 shows the C-V curves with the measurement frequency varied from 5 kHz to 400 kHz at room temperature for samples A, B, C, and D, and the details of the C-V response in such device structures have been reported. 7,8,[31][32][33][34] The frequency dispersion originating from the Al 2 O 3 /AlGaN interface traps response is visible in the second slope region (V gate > À3 V) for the sample A. The 550 C annealing pretreatment does not reduce the dispersion and the 300 C remote plasma exposure results in even worse frequency dispersion due to the amorphous oxide/oxynitride layer.…”

mentioning

confidence: 96%

A crystalline oxide passivation for Al2O3/AlGaN/GaN

Qin

Dong

Kim

et al. 2014

Applied Physics Letters

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“…Applications involving operation at high speed and power require the switching transistors to withstand high electric fields in the "off" state and to have minimum conduction loss in the "on" state. 6,7 Two primary metallizations are being explored for ohmic contact: Ti-based 1-3 and Ta-based. 1 To compete with Si in terms of cost, it is important to enable high-volume production and compatibility with existing Si-CMOS infrastructure.…”

Section: Introductionmentioning

confidence: 99%

Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Johnson

Ravikirthi

Suh

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors report on the integration of an Au-free contact module intended for AlGaN/GaN high-electron-mobility transistors fabricated in a 200 mm Si complementary metal-oxide-semiconductor facility. Contacts are characterized via transfer line method structures, tunneling electron microscopy, and energy-dispersive x-ray spectroscopy. Factors leading to incorrect extraction of contact resistance are discussed. The authors find that reoptimization of chemical vapor deposited silicon nitride on AlGaN/GaN substrates is required to ensure reliable determination of contact resistance, gate-to-source spacing, and gate-to-drain spacing. Additional process development is required to enable parallel processing of Si and GaN devices.

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Cited by 58 publications

References 16 publications

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

A crystalline oxide passivation for Al2O3/AlGaN/GaN

Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

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