Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Johnson, Derek W.; Ravikirthi, Pradhyumna; Suh, Jae Woo; Lee, Rinus T. P.; Hill, Richard J.; Wong, Man Hoi; Piner, Edwin L.; Harris, H. R.

doi:10.1116/1.4874801

Cited by 5 publications

(3 citation statements)

References 12 publications

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“…Matioli et al [13] presented a lateral AlGaN/GaN SBD with a 3-D anode structure, where an integration of a trigate MOS structure with a Schottky junction is designed, demonstrating an ultralow leakage of 260 pA/mm and a turn-ON voltage of 0.85 V. Among those promising AlGaN/GaN SBD architectures, typical high workfunction (φ m ) Ni/Au or Pt-based metals were used for the fabrication of the Schottky contacts [3], [6], [10], [12], [13]. This hinders the high-volume production of those highperformance devices in existing CMOS-compatible processing lines because of their limited dry-etch capability [14].…”

Section: Introductionmentioning

confidence: 99%

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Stoffels

Lenci

et al. 2016

IEEE Trans. Electron Devices

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In this paper, a further leakage reduction of AlGaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been achieved by optimizing the physical vapor deposited TiN as the anode metal without severe degradation of ON-state characteristics. The optimized GET-SBD multifinger power diodes with 10 mm anode width deliver ∼4 A at 2 V and show a median leakage of 1.3 µA at 25 °C and 3.8 µA at 150 °C measured at a reverse voltage of −200 V. The temperature-dependent leakage of Si, SiC, and our GaN power diodes has been compared. The breakdown voltage (BV) of GET-SBDs was evaluated by the variation of anode-to-cathode spacing (L AC ) and the length of field plate. We observed a saturated BV of ∼600 V for the GET-SBDs with L AC larger than 5 µm. The GET-SBD breakdown mechanism is shown to be determined by the parasitic vertical leakage current through the 2.8 µm-thick buffer layers measured with a grounding substrate. Furthermore, we show that the forward voltage of GET-SBDs can be improved by shrinking the lateral dimension of the edge termination due to reduced series resistance. The leakage current shows no dependence on the layout dimension L G (from 2 to 0.75 µm) and remains at a value of ∼10 nA/mm. The optimized Au-free GET-SBD with low leakage current and improved forward voltage competes with high-performance lateral AlGaN/GaN SBDs reported in the literature.

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Section: Introductionmentioning

confidence: 99%

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Stoffels

Lenci

et al. 2016

IEEE Trans. Electron Devices

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“…In recent years, in order to realize the integration of GaN devices and silicon-based complementary metal-oxidesemiconductor (CMOS) chips and to reduce the cost of IC production and manufacturing, CMOS-compatible fabrication process for AlGaN/GaN HEMTs has been extensively studied. [3,4] For Si-CMOS processing line, an Au-free environment is required to meet the strict contamination rules. Therefore, the Au-free gate technology is required in the integration of GaN devices and CMOS chip.…”

Section: Introductionmentioning

confidence: 99%

Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

Jiang¹,

Li²,

Yang³

et al. 2023

Chinese Phys. B

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The reverse gate leakage mechanism of W-gate and TiN-gate AlGaN/GaN HEMTs with N2 plasma surface treatment is investigated by using current-voltage (I-V), capacitance-voltage (C-V) characteristics and theoretical calculation analysis. It is found that the main reverse gate leakage mechanism of both devices is the trap-assisted tunneling (TAT) mechanism at the entire reverse bias region (-30V - 0V). To the best of our knowledge, this is the first time that the analysis of the reverse gate leakage mechanism of W-gate AlGaN/GaN HEMTs has been studied. It is also found that the reverse gate leakage current of the W-gate AlGaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage. Further, the activation energies of the extracted W-gate and TiN-gate AlGaN/GaN HEMTs are 0.0551eV-0.127eV and 0.112eV-0.201eV, respectively.

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“…[4][5][6][7][8][9] The development of CMOS-compatible Au-free processes is being carried out enabling high-volume production of GaN-based devices in existing Si infrastructures. [10][11][12][13][14] Despite the excellent potential and prospect of GaN technology, the electrical stability of the devices remains a key concern due to electron trapping= de-trapping mechanisms. 15,16) Extensive trapping analysis has been performed on AlGaN=GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

Stoffels

Lenci

et al. 2015

Jpn. J. Appl. Phys.

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In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (V AC = %100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the "trapped region" at the AlGaN/Si 3 N 4 interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures.

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Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Cited by 5 publications

References 12 publications

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

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